2SD882SL-P-AA3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD882S MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772S NPN SILICON TRANSISTOR 1 SOT-89 1 SOT-223 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92 *Pb-free plating product number: 2SD882SSL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD882S-x-AA3-R 2SD882SL-x-AA3-R 2SD882S-x-AB3-R 2SD882SL-x-AB3-R 2SD882S-x-T92-B 2SD882SL-x-T92-B 2SD882S-x-T92-K 2SD882SL-x-T92-K Package SOT-223 SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk 2SD882SL-x-AA3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AA3: SOT-223, AB3: SOT-89, T92: TO-92 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-007,C 2SD882S PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation SOT-89 SOT-223 TO-92 DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PD NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified ) RATINGS 40 30 5 3 7 0.6 UNIT V V V A A A 0.5 W 1 W 0.5 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note 1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz MIN 40 30 5 TYP MAX UNIT V V V nA nA 1000 1000 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF Note 1: Pulse test: PW