2SD882SS

UNISONIC TECHNOLOGIES CO., LTD 2SD882SS MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772SS NPN SILICON TRANSISTOR 3 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 2 SOT-23 *Pb-free plating product number: 2SD882SSL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD882SS -x-AE3-R 2SD882SSL-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel 2 SD882SSL-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING D82 Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-018,B 2SD882SS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ TC=25℃ DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified ) RATINGS 40 30 5 3 7 0.6 1 10 UNIT V V V A A A W W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 DC Current Gain (Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW