2SD965-S-TN3-R

厂商：
UTC(友顺)
封装：
描述：
2SD965-S-TN3-R - LOW VOLTAGE HIGH CURRENT TRANSISTOR - Unisonic Technologies

数据手册：

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数据手册
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2SD965-S-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V NPN SILICON TRANSISTOR 1 SOT-89 1 TO-252 APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 *Pb-free plating product number: 2SD965L/2SD965AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965-x-T92-K 2SD965L-x-T92-K 2SD965-x-TN3-R 2SD965L-x-TN3-R 2SD965-x-TN3-T 2SD965L-x-TN3-T 2SD965A-x-AB3-R 2SD965AL-x-AB3-R 2SD965A-x-T92-B 2SD965AL-x-T92-B 2SD965A-x-T92-K 2SD965AL-x-T92-K 2SD965A-x-TN3-R 2SD965AL-x-TN3-R 2SD965A-x-TN3-T 2SD965AL-x-TN3-T Package SOT-89 TO-92 TO-92 TO-252 TO-252 SOT-89 TO-92 TO-92 TO-252 TO-252 Pin Assignment 1 2 3 B C E E C B E C B B C E B C E B C E E C B E C B B C E B C E Packing Tape Reel Tape Box Bulk Tape Reel Tube Tape Reel Tape Box Bulk Tape Reel Tube 2SD965L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) AB3: SOT-89, T92: TO-92, TN3: TO-252 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-007,B 2SD965/A ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current SOT-89 TO-92 TO-252 2SD965 2SD965A SYMBOL VCBO VCEO VEBO PC IC NPN SILICON TRANSISTOR RATINGS 40 20 30 7 500 750 1 5 UNIT V V V V mW mW W A Junction Temperature TJ 150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 Collector-Emitter 2SD965 BVCEO IC=1mA, IB=0 Breakdown Voltage 2SD965A Emitter-Base Breakdown Voltage BVEBO IE=10µA, IC=0 Collector Cut-off Current ICBO VCB=10V, IE=0 Emitter Cut-off Current IEBO VEB=7V, IC=0 VCE=2V, IC=1mA DC Current Gain(note) hFE VCE=2V, IC=0.5A VCE=2V, IC=2A Collector-Emitter Saturation Voltage VCE(SAT) IC=3A, IB= 0.1A Current Gain Bandwidth Product fT VCE=6V, IC=50mA Output Capacitance Cob VCB=20V, IE=0, f=1MHz MIN 40 20 30 7 TYP MAX UNIT V V V V nA nA 100 100 200 230 150 150 50 800 1 V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R 340-600 S 560-800 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R209-007,B 2SD965/A TYPICAL CHARACTERISTICS Static Characteristics 3.0 I B=3.0mA IB=2.5mA I B=2.0mA 2.0 1.5 IB=1.5mA IB=1.0mA I B=0.5mA 1.0 0 10 3 NPN SILICON TRANSISTOR DC Current Gain Collector Current, I C (A) DC Current Gain, hFE 2.5 102 VCE=2V 1 10 0 0.4 0.8 1.2 1.6 2.0 10 10-1 0 101 102 103 104 Collector-Emitter Voltage ( V) Collector Current, IC (mA) Base-Emitter on Voltage 6 V =2V CE Collector Current, I C (A) Saturation Voltage 104 IC=30·I B Saturation Voltage (mV) 25℃ Ta=75 ℃ -25℃ 5 4 3 2 1 0 0 0.4 103 VBE(SAT) VCE(SAT) 10 2 0.8 1.2 1.6 2.0 101 0 10 Base to Emitter Voltage, VBE (V) 10 3 Collector Current, I C (mA) 101 10 2 104 Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT(MHz) Collector Output Capacitance 10 3 103 VCE=6V 102 Capacitance, Cob (pF) f=1MHz IE =0 10 2 101 10 1 100 100 101 102 103 10 0 -1 10 100 101 10 2 Collector Current, IC (mA) Collector-Base Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R209-007,B 2SD965/A TYPICAL CHARACTERISTICS Safe Operation Area 100 Collector Current, IC (A) NPN SILICON TRANSISTOR 10 Icp IC Single pulse Ta =25 ℃ t=10ms t=1s 1 0.1 0.01 0.1 1 10 100 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-007,B

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2SD965-S-TN3-R

物料型号： - 2SD965-x-AB3-R - 2SD965L-x-AB3-R - 2SD965-x-T92-B - 2SD965L-x-T92-B - 2SD965-x-T92-K - 2SD965L-x-T92-K - 2SD965-x-TN3-R - 2SD965L-x-TN3-R - 2SD965-x-TN3-T - 2SD965L-x-TN3-T - 2SD965A-x-AB3-R - 2SD965AL-x-AB3-R - 2SD965A-x-T92-B - 2SD965AL-x-T92-B - 2SD965A-x-T92-K - 2SD965AL-x-T92-K - 2SD965A-x-TN3-R - 2SD965AL-x-TN3-R - 2SD965A-x-TN3-T

器件简介： 2SD965/A是一款NPN硅晶体管，具有低压高电流的特性。UTC 2SD965的集电极-发射极电压可达20V，而UTC 2SD965A可达30V。适用于音频放大器、相机闪光灯和开关电路。

引脚分配： - SOT-89封装：B（基极）, C（集电极）, E（发射极） - TO-92封装：E（发射极）, C（集电极）, B（基极） - TO-252封装：B（基极）, C（集电极）, E（发射极）

参数特性： - 集电极电流高达5A - 集电极-基极电压（VCBO）为40V - 集电极-发射极电压（VCEO）对于2SD965为20V，对于2SD965A为30V - 发射极-基极电压（VEBO）为7V - 集电极功耗对于SOT-89封装为500mW，TO-92封装为750mW，TO-252封装为1W - 集电极电流（Ic）为5A - 结温（TJ）为150℃ - 存储温度（TSTG）为-65℃至+150℃

功能详解： - 直流电流增益（hFE）在不同集电极电流下有不同的范围，例如在VcE=2V, Ic=1mA时为200，VcE=2V, Ic=0.5A时为230，VcE=2V, Ic=2A时为150。 - 集电极-发射极饱和电压（VCE(SAT)）在Ic=3A, IB=0.1A时为1V。 - 电流增益带宽积（fr）在VcE=6V, Ic=50mA时为150MHz。 - 输出电容（Cob）在VcB=20V, Ie=0, f=1MHz时为50pF。

应用信息：适用于音频放大器、相机闪光灯和开关电路。

封装信息： - SOT-89 - TO-92 - TO-252

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