2SD965AG-R-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR  FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V  APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SD965G-x-AB3-R SOT-89 2SD965L-x-T92-B 2SD965G-x-T92-B TO-92 2SD965L-x-T92-K 2SD965G-x-T92-K TO-92 2SD965L-x-TN3-R 2SD965G-x-TN3-R TO-252 2SD965AG-x-AB3-R SOT-89 2SD965AL-x-T92-B 2SD965AG-x-T92-B TO-92 2SD965AL-x-T92-K 2SD965AG-x-T92-K TO-92 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R TO-252 Note: Pin Assignment: C: Collector B: Base E: Emitter www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 B C E E C B E C B B C E B C E E C B E C B B C E Packing Tape Reel Tape Box Bulk Tape Reel Tape Reel Tape Box Bulk Tape Reel 1 of 5 QW-R209-007.G 2SD965/A  NPN SILICON TRANSISTOR MARKING PACKAGE MARKING 2SD965 2SD965A SOT-89 TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-007.G 2SD965/A  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO 2SD965 2SD965A Emitter-Base Voltage Collector Dissipation VCEO VEBO SOT-89 TO-92 TO-252 Collector Current PC IC RATINGS 40 20 30 7 500 UNIT V V V V mW 750 1 5 mW W A Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown 2SD965 Voltage 2SD965A Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance  SYMBOL BVCBO TEST CONDITIONS IC=100μA, IE=0 BVCEO IC=1mA, IB=0 BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) fT Cob IE=10μA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=1mA VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB= 0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz MIN 40 20 30 7 230 150 TYP MAX UNIT V V V V 100 nA 100 nA 200 800 1 150 50 V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 340-600 S 560-800 3 of 5 QW-R209-007.G 2SD965/A Collector Current, IC (A) Saturation Voltage (mV) DC Current Gain, hFE Collector Current, IC (A) TYPICAL CHARACTERISTICS Current Gain-Bandwidth Product Collector Output Capacitance 103 103 VCE=6V Capacitance, Cob (pF) Current Gain-Bandwidth Product, fT(MHz)  NPN SILICON TRANSISTOR 102 101 100 100 101 102 103 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw f=1MHz IE=0 102 101 100 10-1 100 101 102 Collector-Base Voltage (V) 4 of 5 QW-R209-007.G 2SD965/A TYPICAL CHARACTERISTICS Collector Current, IC (A) S/ b D is a sip lim ite d n tio ite Lim d Derating (PC, IC)  NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-007.G