2SD965AG-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V NPN SILICON TRANSISTOR APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit Lead-free: 2SD965L/2SD965AL Halogen-free:2SD965G/2SD965AG ORDERING INFORMATION Normal 2SD965-x-AB3-R 2SD965-x-T92-B 2SD965-x-T92-K 2SD965-x-TN3-R 2SD965A-x-AB3-R 2SD965A-x-T92-B 2SD965A-x-T92-K 2SD965A-x-TN3-R Ordering Number Lead Free Halogen Free 2SD965L-x-AB3-R 2SD965G-x-AB3-R 2SD965L-x-T92-B 2SD965G-x-T92-B 2SD965L-x-T92-K 2SD965G-x-T92-K 2SD965L-x-TN3-R 2SD965G-x-TN3-R 2SD965AL-x-AB3-R 2SD965AG-x-AB3-R 2SD965AL-x-T92-B 2SD965AG-x-T92-B 2SD965AL-x-T92-K 2SD965AG-x-T92-K 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R Package SOT-89 TO-92 TO-92 TO-252 SOT-89 TO-92 TO-92 TO-252 Pin Assignment 1 2 3 B C E E C B E C B B C E B C E E C B E C B B C E Packing Tape Reel Tape Box Bulk Tape Reel Tape Reel Tape Box Bulk Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-007.C 2SD965/A ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current SOT-89 TO-92 TO-252 2SD965 2SD965A SYMBOL VCBO VCEO VEBO PC IC NPN SILICON TRANSISTOR RATINGS 40 20 30 7 500 750 1 5 UNIT V V V V mW mW W A Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter 2SD965 Breakdown Voltage 2SD965A Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT Cob TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=1mA VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB= 0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz MIN 40 20 30 7 TYP MAX UNIT V V V V 100 nA 100 nA 200 800 1 150 50 V MHz pF 230 150 CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R 340-600 S 560-800 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R209-007.C 2SD965/A TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Current, IC (A) Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT(MHz) 103 Capacitance, Cob (pF) VCE=6V 102 103 Saturation Voltage (mV) DC Current Gain, hFE Collector Output Capacitance f=1MHz IE=0 102 101 101 100 100 101 102 103 100 10-1 100 101 102 Collector Current, IC (mA) Collector-Base Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R209-007.C 2SD965/A TYPICAL CHARACTERISTICS Safe Operation Area 100 10 Icp IC 1 t=1s Single pulse Ta=25℃ t=10ms NPN SILICON TRANSISTOR 0.1 0.01 0.1 1 10 100 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-007.C