3N60-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 3N60 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. Power MOSFET FEATURES * RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: 3N60L Halogen-free: 3N60G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 3N60-x-TA3-T 3N60-x-TF1-T 3N60-x-TF3-T 3N60-x-TM3-R 3N60-x-TN3-R Ordering Number Lead Free 3N60L-x-TA3-T 3N60L-x-TF1-T 3N60L-x-TF3-T 3N60L-x-TM3-R 3N60L-x-TN3-R Halogen Free 3N60G-x-TA3-T 3N60G-x-TF1-T 3N60G-x-TF3-T 3N60G-x-TM3-R 3N60G-x-TN3-R Package TO-220 TO-220F1 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel 3N60L-x-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating (1) R: Tape Reel, T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-22F, TM3: TO-251, TN3: TO-252 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-110,F 3N60 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL 3N60-A 3N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 1) IDM 12 A Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy Repetitive (Note 1) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 75 Power Dissipation PD W TO-220F/TO-220F1 34 TO-251/TO-252 50 Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220 Junction-to-Ambient TO-220F/TO-220F1 TO-251/TO-252 TO-220 Junction-to-Case TO-220F/TO-220F1 TO-251/TO-252 SYMBOL θJA RATING 62.5 62.5 110 1.67 3.68 2.5 UNIT °C/W θJC °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 3N60-A 3N60-B SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.6 2.0 2.8 350 50 5.5 4.0 3.6 450 65 7.5 MIN TYP MAX UNIT 600 650 10 100 -100 V V μA nA nA V/℃ V Ω pF pF pF Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance △BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250 μA VGS = 10 V, ID = 1.5A VDS = 25 V, VGS = 0 V, f = 1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-110,F 3N60 ELECTRICAL CHARACTERISTICS(Cont.) Power MOSFET SWITCHING CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Turn-On Delay Time tD(ON) 10 30 ns Turn-On Rise Time tR 30 70 ns VDD = 300V, ID = 3.0 A, RG = 25Ω (Note 4, 5) Turn-Off Delay Time tD(OFF) 20 50 ns 30 70 ns Turn-Off Fall Time tF Total Gate Charge QG 10 13 nC VDS= 480V,ID= 3.0A, VGS= 10 V Gate-Source Charge QGS 2.7 nC (Note 4, 5) 4.9 nC Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A 1.4 V Maximum Continuous Drain-Source Diode IS 3.0 A Forward Current Maximum Pulsed Drain-Source Diode ISM 12 A Forward Current Reverse Recovery Time tRR 210 ns VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/μs (Note 4) Reverse Recovery Charge QRR 1.2 μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-110,F 3N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-110,F 3N60 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-110,F 3N60 TYPICAL CHARACTERISTICS Power MOSFET On-Resistance Variation vs. Drain Current and Gate Voltage 6 5 4 3 2 1 Note: TJ=25℃ On State Current vs. Allowable Case Temperature 10 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (Ω) VGS=20V VGS=10V 1 0 0 2 4 6 8 10 12 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Notes: 1. VGS=0V 2. 250µs Test 1.4 1.6 1.8 Drain Current, ID (A) Source-Drain Voltage, VSD (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-110,F 3N60 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Transient Thermal Response Curve 1 D=0.5 3.0 2.5 2.0 1.5 1.0 Notes: 1. θJC (t) = 1.18 /W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) Maximum Drain Current vs. Case Temperature 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.1 0.5 0 25 50 75 100 125 Case Temperature, TC ( ) Safe Operating Area – 650V for 3N60-B Operation in This Area is Limited by RDS(on) 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Safe Operating Area – 600V for 3N60-A Operation in This Area is Limited by RDS(on) 150 101 100µs 1ms 101 100µs 1ms 100 DC Notes: 1. TJ=25 2. TJ=150 3. Single Pulse 10ms 100 DC Notes: 1. TJ=25 2. TJ=150 3. Single Pulse 10ms 10-1 10-1 10-2 100 101 102 600 103 10-2 100 101 102 650 103 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) 7 of 8 QW-R502-110,F UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-110,F