3N80_11

UNISONIC TECHNOLOGIES CO., LTD 3N80 3 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET FEATURES * RDS(ON)=3.8Ω @VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T Package TO-220 TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-283.D 3N80 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Drain-Gate Voltage (RG=20kΩ) VDGR 800 V Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Insulation Withstand Voltage (DC) TO-220F/ TO-220F1 VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 170 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 70 Power Dissipation PD W TO-220F/ TO-220F1 25 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 °C, ID=IAR, VDD=50V 4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-220F/ TO-220F1 TO-220 TO-220F/ TO-220F1 SYMBOL θJA θJC RATING 62.5 62.5 1.78 5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance (Note 2) SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS COSS(EQ) tD(ON) tR tD(OFF) tF QG QGS QDD TEST CONDITIONS VGS=0V, ID=250μA VDS=800V, VGS=0V VGS=±30V, VDS=0V VDS=VGS, ID=250μA VGS=10V, ID=1.5A VDS=15V, ID=1.5A MIN TYP MAX UNIT 800 1 ±10 3 3.75 3.8 2.1 485 57 11 22 17 27 36 40 19 3.2 10.8 4.5 4.5 V μA μA V Ω S pF pF pF pF ns ns ns ns nC nC nC VDS=25V, VGS=0V, f=1MHz VGS=0V, VDS=0V~640V VDD=400V, ID=3 A, RG=4.7Ω VGS=10V VDD=640V, ID=3A, VGS=10V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-283.D 3N80 ELECTRICAL CHARACTERISTICS(Cont.) Power MOSFET PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A Reverse Recovery Current IRRM 8.4 A ISD=3A, di/dt=100A/μs, Body Diode Reverse Recovery Time tRR 384 ns VDD=50V, TJ=25°C 1600 nC Body Diode Reverse Recovery Charge QRR Note: 1.Pulse width=300μs, Duty cycle≦1.5% Note: 2.COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-283.D 3N80 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-283.D 3N80 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-283.D 3N80 TYPICAL CHARACTERISTICS 4 Drain Current vs. Source to Drain Voltage Power MOSFET Drain-Source On-State Resistance Characteristics 1200 1000 Drain Current, ID (mA) 800 600 400 200 3 Drain Current,ID (A) VGS=10V, ID=1.25A 2 1 0 0 200 400 600 800 1000 Source to Drain Voltage,VSD (mV) 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) Drain Current vs. Gate Threshold Voltage 300 250 Drain Current,ID (µA) 200 150 100 50 0 0 1 2 4 3 Gate Threshold Voltage,VTH (V) Drain Current,ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 400 350 300 250 200 150 100 50 0 0 600 800 1000 Drain-Source Breakdown Voltage,BVDSS(V) 200 400 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-283.D