3N90L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TF1-T 3N90G-TF1-T 3N90L-TF2-T 3N90G-TF2-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source  Package TO-220 TO-220F TO-220F1 TO-220F2 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-290.G 3N90  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER RATINGS UNIT 900 V ±30 V Continuous 3 A Drain Current Pulsed (Note 2) 12 A Avalanche Energy Single Pulsed (Note 3) 195 mJ Peak Diode Recovery dv/dt (Note 4) 1.85 V/ns TO-220/TO-263 90 W Power Dissipation TO-220F/TO-220F1 PD 36 W TO-220F2 37 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=30mH, IAS=3.6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 4.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage  SYMBOL VDSS VGSS ID IDM EAS dv/dt THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220/ TO-263 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62.5 1.38 3.47 3.37 UNIT °C/W °C/W 2 of 8 QW-R502-290.G 3N90  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA Drain-Source Leakage Current IDSS VDS=900V, VGS=0V Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=100V, VGS=10V, ID=4A Gate-Source Charge QGS IG=1mA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time (Note 1) tD(ON) Turn-On Rise Time tR VDD=100V, VGS=10V, ID=4A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage (Note 1) VSD IS=3.0A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=4.0A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 900 3.0 10 ±10 V μA μA 5.0 3.5 V Ω 850 95 10 pF pF pF 27 10 7.8 14 17 70 48 nC nC nC ns ns ns ns 461 9.2 3 A 12 A 1.4 V nS μC 3 of 8 QW-R502-290.G 3N90  Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-290.G 3N90  Power MOSFET TEST CIRCUITS AND WAVEFORMS Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-290.G 3N90  Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-290.G 3N90  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-290.G 3N90  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-290.G