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4124

4124

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    4124 - HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS - Unisonic Technologies

  • 数据手册
  • 价格&库存
4124 数据手册
UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:4124L ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ TSTG RATINGS 400 200 7 1.5 20 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta = 25℃) PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Storage Time Cut-off Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=7V, Ic=0 VCE=10V, Ic=0.2A VCE=5V, Ic=1.5A IC=0.4A, IB=0.1A IC=1.5A, IB=0.5A IC=0.8A, IB=0.2A IC=1A, IB1= -IB2 = 0.2A IC=1A, IB1= -IB2 = 0.2A VCE=10V, Ic=0.1A MIN 200 400 7 TYP MAX UNIT V V V µA µA µA 10 5 100 100 100 60 40 0.5 2 1.2 0.7 4 4 V V V µs µs MHz UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R204-019,A www.unisonic.com UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR Safeoperating area 10 120 100 1 80 % CHARACTERISTICS CURVES Pc∝Tj Is/s IC (A) 60 40 20 Ptot 0.1 0.01 1 10 VCC ( V) 100 1000 0 0 50 TJ (℃) 100 150 hFE - Ic 100 VCC=1.5V TJ=125℃ 100 hFE - Ic V CC=5V TJ=125℃ TJ=25℃ T J=25℃ hFE 10 hFE 0.01 0.1 Ic (A) 1 10 10 1 0.001 1 0.001 0.01 0.1 Ic (A) 1 10 VCE (sat) (V) - Ic 10 hFE =5 2.0 1.8 1.6 Vce(sat) (V) VBE(sat) (V) VBE (sat) (V) - Ic hFE=5 1 TJ=125℃ 1.4 1.2 1.0 0.8 0.6 TJ=25℃ 0.1 TJ=25℃ TJ=125℃ 0.01 0.1 1 Ic (A) 10 0.4 0.1 1 Ic (A) 10 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R204-019,A www.unisonic.com UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R204-019,A www.unisonic.com

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