4126

UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS . DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. 1 FEATURES * Triple diffused technology. * High switching speed TO-126 *Pb-free plating product number: 4126L PIN CONFIGURATION PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter ORDERING INFORMATION Order Number Normal Lead free 4126-T60-T 4126L-T60-T Package TO-126 Packing Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD 1 QW-R204-021,B 4126 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Tc = 25℃) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 400 200 7 3 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Emitter Maintenance Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Storage Time Feature Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=7V, Ic=0 VCE=10V, Ic=0.5A VCE=5V, Ic=3A IC=0.5A, IB=0.1A IC=2A, IB=0.5A IC=1A, IB=0.25A IC=1A, IB1= -IB2 = 0.2A IC=1A, IB1= -IB2 = 0.2A VCE=10V, Ic=0.1A MIN 200 400 7 100 100 100 60 40 0.5 1.5 1.2 0.7 4 TYP MAX UNIT V V V µA µA µA 10 5 4 V V V µs µs MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R204-021,B 4126 ■ TYPICAL CHARACTERICS Safe work area 10 NPN EPITAXIAL SILICON TRANSISTOR Pc∝TJ 120 100 1 80 Is/s IC (A) % 0.1 60 40 20 Ptot 0.01 VCC (V) 0 TJ (℃) hFE - Ic 100 VCC=1.5V 100 hFE - Ic VCC=5V TJ=125℃ TJ=125℃ hFE 10 hFE TJ=25℃ TJ=25℃ 10 1 0.001 0.01 0.1 Ic (A) 1 10 1 0.001 0.01 0.1 Ic (A) 1 10 VCE (sat) (V) - Ic 10 hFE=5 1.2 1.1 1 Vce(sat) (V) Vbe(sat) (V) VBE (sat) (V) - Ic hFE=5 1 0.9 0.8 0.7 0.6 0.5 TJ=25℃ TJ=125℃ TJ=25℃ 0.1 TJ=125℃ 0.01 0.1 1 Ic (A) 10 0.4 0.1 1 Ic (A) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R204-021,B 4126 NPN EPITAXIAL SILICON TRANSISTOR U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R204-021,B