4N60L-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 4N60 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 Power MOSFET TO-220 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 TO-220F TO-220F1 FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness 1 1 TO-251 TO-252 SYMBOL 2.Drain 1 1 TO-263 TO-262 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60L-x-TA3-T 4N60G-x-TA3-T 4N60L-x-TF1-T 4N60G-x-TF1-T 4N60L-x-TF3-T 4N60G-x-TF3-T 4N60L-x-TM3-T 4N60G-x-TM3-T 4N60L-x-TN3-R 4N60G-x-TN3-R 4N60L-x-T2Q-T 4N60G-x-T2Q-T 4N60L-x-TQ3-R 4N60G-x-TQ3-R 4N60L-x-TQ3-T 4N60G-x-TQ3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-061, N 4N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER 4N60-A Drain-Source Voltage 4N60-B Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) SYMBOL Power MOSFET RATINGS UNIT 600 V VDSS 650 V VGSS ±30 V IAR 4.4 A ID 4.0 A 16 A IDM 4N60 260 mJ Single Pulsed (Note 3) EAS Avalanche Energy 4N60-E 200 mJ Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 36 W Power Dissipation PD TO-251 50 W TO-252 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-251 TO-252 TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-251 TO-252 SYMBOL 4N60-A 4N60-B Forward Reverse BVDSS IDSS IGSS SYMBOL θJA RATINGS 62.5 62.5 83 83 1.18 3.47 2.5 2.5 UNIT °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W MIN TYP MAX UNIT 600 650 10 100 -100 0.6 2.0 4.0 2.5 520 70 8 670 90 11 V V μA nA nA V/°С V Ω pF pF pF Junction to Case θJc ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance △BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250 μA VGS = 10 V, ID = 2.2 A VDS = 25 V, VGS = 0 V, f = 1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-061,N 4N60 ELECTRICAL CHARACTERISTICS(Cont.) Power MOSFET PARAMETER SYMBOL TEST CONDITIONS MIN TYP SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 VDD = 300V, ID = 4.0A, RG = 25Ω Turn-On Rise Time tR 45 (Note 1, 2) Turn-Off Delay Time tD(OFF) 25 Turn-Off Fall Time tF 35 Total Gate Charge QG 15 VDS= 480V,ID= 4.0A, VGS= 10 V Gate-Source Charge QGS 3.4 (Note 1, 2) Gate-Drain Charge QGD 7.1 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 4.4 A, Reverse Recovery Time tRR 250 dIF/dt = 100 A/μs (Note 1) 1.5 Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature MAX UNIT 35 100 60 80 20 ns ns ns ns nC nC nC V A A ns μC 1.4 4.4 17.6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-061,N 4N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-061,N 4N60 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-061,N UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4N60 TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 Power MOSFET On-Resistance Junction Temperature 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA -50 0 50 100 150 200 Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200 0.8 -100 Junction Temperature, TJ (°С) Junction Temperature, TJ (°С) On-State Characteristics 10 VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V Top: Transfer Characteristics 10 25°С 5.0V 1 150°С 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°С 0.1 2 4 6 Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 1 10 8 10 Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-061,N 4N60 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Thermal Response, θJC (t) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PD (w) Gate-Source Voltage, VGS (V) Capacitance (pF) 7 of 8 QW-R502-061,N 4N60 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-061,N