4N70G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 4N70 4 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. Power MOSFET 1 TO-220F FEATURES * RDS(ON) = 2.8Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 TO-220F1 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N70L-TF1-T 4N70G-TF1-T 4N70L-TF3-T 4N70G-TF3-T Note: Pin Assignment: G: Gate D: Drain Package TO-220F1 TO-220F S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-340.A 4N70 ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A Continuous ID 4.0 A Drain Current 16 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 260 mJ Avalanche Energy Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL θJA θJc SYMBOL BVDSS IDSS IGSS ΔBVDSS TJ RATINGS 62.5 3.47 TEST CONDITIONS UNIT °С/W °С/W MIN TYP MAX UNIT 700 10 100 -100 0.6 2.0 4.0 2.8 520 70 8 670 90 11 V μA nA V/°С V Ω pF pF pF ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS (Ta =25°С, unless otherwise specified) VGS = 0 V, ID = 250 μA VDS = 700 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ID = 250 μA, Referenced to 25°C VDS = VGS, ID = 250 μA VGS = 10 V, ID = 2.2 A Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 350V, ID = 4.0A, RG = 25Ω (Note 1, 2) VDS= 560V, ID= 4.0A, VGS= 10 V (Note 1, 2) 13 35 45 100 25 60 35 80 15 20 3.4 7.1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-340.A 4N70 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 4.4 A, Reverse Recovery Time tRR dI/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 4.4 17.6 250 1.5 V A A ns μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-340.A 4N70 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-340.A 4N70 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-340.A 4N70 TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Power MOSFET 300 250 Drain Current, ID (µA) 200 150 100 50 0 300 250 Drain Current, ID (µA) 200 150 100 50 0 Drain Current vs. Gate Threshold Voltage 0 200 400 600 800 1000 1200 1400 Drain-Source Breakdown Voltage, BVDSS(V) 0 1 4 5 6 2 3 Gate Threshold Voltage, VTH (V) 7 Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current, ID (A) 6 of 6 QW-R502-340.A