4N80G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Preliminary Power MOSFET 4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode Power FET. It uses UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80 is universally applied in high efficiency switch mode power supply. 1 TO-220 1 TO-220F 1 TO-220F1 FEATURES * 4.0A, 800V, RDS(on)=3.6Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N80L-TA3-T 4N80G-TA3-T 4N80L-TF3- T 4N80G-TF3- T 4N80L-TF1- T 4N80G-TF1- T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-505.a 4N80 Preliminary Power MOSFET UNIT V V A A mJ mJ V/ns W W °C °C ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 800 Gate-Source Voltage VGSS ±30 Continuous ID 4.0 Drain Current 15.6 Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 460 Avalanche Energy 13 Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 TO-220 106 Power Dissipation PD TO-220F/TO-220F1 36 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F/TO-220F1 TO-220 Junction to Case TO-220F/TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 1.18 3.47 UNIT °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-505.a 4N80 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS MIN 800 0.95 10 100 100 -100 3.0 2 3.8 680 75 8.6 19 4.2 9.1 16 45 35 35 5.0 3.6 TYP MAX UNIT V V/°C µA µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns μC VGS=0V, ID=250µA ID=250μA, Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A Forward Transconductance gFS VDS=50V, ID=2A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=640V, VGS=10V, ID=4A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=4A, RG=25Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=4A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=57mH, IAS=4A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 880 100 12 25 40 100 80 80 3.9 15.6 1.4 575 3.65 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-505.a 4N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-505.a UNISONIC TECHNOLOGIES CO., LTD 4N80 Gate Charge Test Circuit VGS QG Preliminary Power MOSFET Gate Charge Waveforms Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 5 of 6 QW-R502-505.a 4N80 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-505.a