4N90G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 4N90 Preliminary Power MOSFET 4 Amps, 900 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 4N90 is particularly applied in high efficiency switch mode power supplies. FEATURES * Typically 17nC low gate charge * High switching speed * 4A, 900V, RDS(ON)=4.2Ω @ VGS=10V * Typically 5.6pF low CRSS * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N90L-TA3-T 4N90G-TA3-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 S: Source 1 G Pin Assignment 2 3 D S Packing Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-479.a 4N90 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 4 A Continuous ID 4 A Continuous Drain Current 16 A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 570 mJ Avalanche Energy Repetitive (Note 1) EAR 14 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 140 W Operating Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC RATINGS 62.5 0.89 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-479.a 4N90 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS MIN TYP MAX UNIT V 1.05 10 100 +100 -100 5.0 4.2 V/°C µA µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns μC VGS=0V, ID=250µA 900 ID=250μA, Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Forward IGSS VGS=+30V, VDS=0V Gate- Source Leakage Current VGS=-30V, VDS=0V Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A Forward Transconductance gFS VDS=50V, ID=2A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=720V, VGS=10V, ID=4A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=450V, ID=4A, RG=25Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=4A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=67mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 5. Essentially independent of operating temperature 3.5 5 740 65 5.6 17 4.5 7.5 25 50 40 35 960 85 7.3 22 60 110 90 80 4 16 1.4 450 3.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-479.a 4N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-479.a 4N90 Gate Charge Test Circuit Preliminary Power MOSFET Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-479.a 4N90 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-479.a