50N06-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. TO-220 1 TO-220F FEATURES * RDS(ON) = 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 50N06L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating 50N06-TA3-T 50N06L-x-TA3-T 50N06-TF3-T 50N06L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 50N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-088,A 50N06 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate to Source Voltage SYMBOL VDSS VGSS MOSFET RATINGS UNIT 60 V ±20 V TC = 25℃ 50 A Continuous Drain Current ID TC = 100℃ 35 A Drain Current Pulsed (Note 1) IDM 200 A Single Pulsed Avalanche Energy (Note 2) EAS 480 mJ Repetitive Avalanche Energy (Note 1) EAR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/ns Total Power Dissipation (TC = 25℃) 130 W PD 0.9 W/℃ Derating Factor above 25℃ Operation Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL θJC θCS θJA MIN TYP 0.5 62.5 MAX 1.15 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS TC = 25℃ unless otherwise specified PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Dynamic Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS TEST CONDITIONS MIN 60 0.07 1 100 -100 2.0 18 900 430 80 40 100 90 80 30 9.6 10 4.0 23 1220 550 100 60 200 180 160 40 TYP MAX UNIT V V/℃ µA µA nA nA V mΩ pF pF pF ns ns ns ns nC nC nC VGS = 0 V, ID = 250 µA ID = 250 µA, △BVDSS/△TJ Referenced to 25℃ VDS = 60 V, VGS = 0 V IDSS VDS = 48 V, TC = 125℃ VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 µA VGS = 10 V, ID = 25 A VGS = 0 V, VDS = 25 V f = 1MHz VDD = 30V, ID =25 A, RG = 50Ω (Note 4, 5) VDS = 48V, VGS = 10 V ID = 50A, (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-088,A 50N06 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 50A, VGS = 0 V Continuous Source Current IS Integral Reverse p-n Junction Diode in the MOSFET D MOSFET MIN TYP MAX 1.5 50 A UNIT V Pulsed Source Current ISM G S 200 Reverse Recovery Time tRR IS = 50A, VGS = 0 V dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH, IAS=50A, VDD=25V, RG=0Ω, Starting TJ=25℃ 3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. 54 81 ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-088,A 50N06 TEST CIRCUITS AND WAVEFORMS MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-088,A 50N06 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 12V 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 1mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RG VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-088,A 50N06 TYPICAL CHARACTERISTICS On-State Characteristics V GS Top: 15V 2 10 V 10 8V 7V 6V 5 .5V 5V Bottorm : 4.5V MOSFET Transfer Characteristics 102 Drain Current, ID (A) Drain Current, ID (A) 25 ℃ 101 4.5V 10 1 1 50 ℃ Note: 1. VDS=50V 2. 250µs Pulse Test 100 2 45 67 8 9 10 3 Gate-Source Voltage, VGS (V) 100 10-1 101 10 0 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance, RDS(ON) (mΩ) On-Resistance Variation vs Drain Current . and Gate Voltage 2.5 2.0 1.5 1.0 0.5 VGS=10V V GS=20V Reverse Drain Current, ISD (A) 102 On State Current vs. Allowable Case Temperature 150℃ 10 1 25℃ *Note: 1. VGS=0V 2. 250µs Test 1.6 0.0 0 20 40 60 80 100 120 140160180 200 Drain Current, I D (A) 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage VSD (V) , Gate-to-Source Voltage, VGS (V) 3000 2500 Capacitance (pF) Capacitance Characteristics (Non-Repetitive) CISS=CGS +CGD (C DS=shorted) COSS =C DS+C GD CRSS =CGD C ISS *Note: 1. VGS=0V 2. f = 1MHz Gate Charge Characteristics 12 10 8 6 4 2 0 0 *Note: ID=50A 5 10 15 20 25 30 35 40 45 Total Gate Charge, QG (nC) VDS=30V 2000 1500 1000 500 0 COSS VDS=48V CRSS 15 20 25 30 35 10 5 Drain-Source Voltage, VDC (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-088,A 50N06 TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs Junction . Temperature 1.2 1.1 On-Resistance Variation vs . Junction Temperature MOSFET Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 *Note: 1. VGS=0V 2. ID=250µA 0 50 100 150 200 0.9 *Note: 1. VGS=10V 2. I D=25A -50 0 50 100 150 Junction Temperature, T J (℃) 0.8 -100 -50 Junction Temperature, T J (℃) Maximum Safe Operating 10 Operation in This Area by RDS (on) Drain Current , ID,(A) 3 Maximum Drain Current vs. Case Temperature 50 Drain Current, ID (A) 10 2 1 00µs 1ms 10ms 10ms 40 30 20 10 0 10 1 *Note: 0 10 1. T =25 ℃ c 2. T J=150℃ -1 3. Single Pulse 10 1 0 1 2 10 10 10 10 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, T C (℃) Transient Thermal Response Curve Thermal Response, ZθJC (t) 100 D=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse -2 *Note: 1. ZθJ C (t ) = 1.42 ℃/W Max. 2. Duty Factor , D=t1/ t2 3. TJ -TC =PDM×ZθJ C (t) 10-1 1 0 -5 0 101 10 10 -4 10-3 10-2 10-1 10 Square Wave Pulse Duration t1 (sec) , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-088,A 50N06 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-088,A