5N60L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 5N60 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 Power MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-220 1 TO-220F FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra low gate charge ( typical 15 nC ) * Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 5N60L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Normal 5N60-TA3-T 5N60-TF3-T Order Number Lead Free Plating 5N60L-TA3-T 5N60L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 5N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-065,B 5N60 ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) SYMBOL VDSS VGSS IAR Power MOSFET RATINGS UNIT 600 V ±30 V 4.5 A TC = 25℃ 4.5 A ID Continuous Drain Current TC = 100℃ 2.6 A Pulsed Drain Current (Note 1) IDM 18 A Avalanche Energy, Single Pulsed (Note 2) EAS 210 mJ Avalanche Energy, Repetitive Limited by TJ(MAX) EAR 10 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TC = 25℃ 100 W Power Dissipation PD Derate above 25℃ 0.8 W/℃ Junction Temperature TJ +150 ℃ Operating and Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case Case-to-Sink SYMBOL θJA θJC θCS RATINGS 62.5 1.25 0.5 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Breakdown Voltage Temperature Coefficient Gate-Body Leakage Current Forward Reverse SYMBOL BVDSS IDSS TEST CONDITIONS VGS =0V, ID = 250µA VDS =600V, VGS = 0V VDS =480V, TC = 125℃ MIN 600 1 10 0.6 100 -100 2.0 2.0 4.7 515 55 6.5 10 42 38 46 15 2.5 6.6 4.0 2.5 TYP MAX UNIT V µA µA V/℃ nA nA V Ω S pF pF pF ns ns ns ns nC nC nC △BVDSS/△ ID =250µA, Referenced to 25℃ TJ VGS =30V, VDS = 0V IGSS VGS =-30V, VDS = 0V VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS =VGS, ID = 250µA VGS =10V, ID = 2.25A VDS =40V, ID = 2.25A (Note 4) VDS = 25V, VGS = 0V, f = 1.0MHz On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Delay Time Turn-On Rise Time Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 670 72 8.5 30 90 85 100 19 VDD = 300V, ID =4.5 A, RG = 25Ω (Note 4, 5) VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-065,B 5N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode Forward ISM Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Note 1. Repetitive Rating : Pulse width limited by TJ 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃ 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 4.5 18 300 2.2 V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-065,B 5N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-065,B 5N60 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 12V 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 3mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-065,B 5N60 TYPICAL CHARACTERISTICS On-Region Characteristics V GS Top: 5.0V 101 Bottorm :4.5V Power MOSFET Transfer Characteristics 5V Drain Current, ID (A) 10 Drain Current, ID (A) 1 100 25℃ 100 *Notes: 1. VDS=40V 2. 250µs Pulse Test 10-1 2 4 6 8 Gate-Source Voltage, VGS (V) 10 10 -1 4.5V 10-2 10-1 *Notes: 1. 250µs Pulse Test 2. TC=25℃ 100 101 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance, RDS(O N) (Ω) 6 5 4 3 2 1 0 On-Resistance Variation vs Drain Current . and Gate Voltage Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 10 1 100sµ 1ms 10 0m 10ms s DC VGS=20V Drain Current, I D (A) VGS =10V 100 10-1 *Note: TJ=25℃ 0 2 4 6 Drain Current, ID (A) 8 10 10 -2 0 10 *Notes: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 10 10 Drain-Source Voltage, VDS (V) 1 2 10 3 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-065,B