60N06-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 60N06 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. Power MOSFET FEATURES * RDS(ON) = 18mΩ @VGS = 10 V * Ultra low gate charge ( typical 39 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115 pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 60N06L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 60N06-TA3-T 60N06L-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source 60N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating Pin Assignment 1 2 3 G D S Packing Tube (1) T: Tube, R: Tape Reel (2) TA3: TO-220 (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd. 1 of 8 QW-R502-121.A 60N06 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to Source Voltage Gate to Source Voltage SYMBOL VDSS VGS Power MOSFET RATINGS UNIT 60 V ±20 V TC = 25℃ 60 A Continuous Drain Current ID TC = 100℃ 39 A Drain Current Pulsed (Note 1) IDM 120 A Single Pulsed (Note 2) EAS 1000 mJ Avalanche Energy 180 mJ Repetitive (Note 1) EAR Total Power Dissipation PD 120 W Junction Temperature TJ +175 ℃ Storage Temperature TSTG -55 ~ +175 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJC MIN TYP MAX 62.5 1.25 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS = 0 V, ID = 250 µA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A MIN 60 1 100 -100 2.0 14 2000 400 115 12 11 25 15 39 12 10 30 30 50 30 60 4.0 18 TYP MAX UNIT V µA nA nA V mΩ pF pF pF ns ns ns ns nC nC nC VGS = 0V, VDS =25V, f = 1MHz VDD=30V, ID=60A, RL=0.5Ω, VGS=10V (Note 4, 5) VDS = 30V, VGS = 10 V ID = 60A (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-121.A 60N06 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS = 0 V, IS = 60A Continuous Source Current IS Pulsed Source Current ISM Reverse Recovery Time tRR IS = 60A, VGS = 0 V, dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃ 3. ISD≤60A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 5. Essentially independent of operating temperature. Power MOSFET MIN TYP MAX UNIT 1.6 60 120 V A ns µC 60 3.4 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-121.A 60N06 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-121.A 60N06 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-121.A 60N06 TYPICAL CHARACTERISTICS Power MOSFET Drain Current, ID (A) Capacitance 3000 2500 2000 6 1500 4 1000 Coss 500 0 Crss 2 0 10 8 VGS = 10V ID = 60A On-Resistance, RDS(ON) (Ω) Transconductance, gfs (S) Drain Current, ID (A) Gate Charge Ciss 0 20 10 30 Drain-to-Source Voltage, VDS (V) 40 0 20 10 30 Total Gate Charge, QG (nC) 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-121.A 60N06 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET On-Resistance, RDS(ON) (Ω) (Normalized) Maximum Avalanche and Drain Current vs. Case Temperature 70 60 Drain Current, ID (A) 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 Case Temperature, TC (℃) Drain Current, ID (A) Source Current, IS (A) Safe Operating Area 200 100 Limited by RDS(on) 10 10μs 100μs 1ms 10ms 100ms 1 dc TJ = 25℃ Single Pulse 0.1 0.1 10 1 Drain-to-Source Voltage, VDS (V) 100 Normalized Thermal Transient Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0. 01 -5 10 0.05 0.02 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-121.A 60N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-121.A