UNISONIC TECHNOLOGIES CO., LTD 6N10
Preliminary Power MOSFET
6 Amps, 100 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance. The UTC 6N10 is generally applied in voltage applications, such as DC motor control, audio amplifier and high efficiency switching DC/DC converters. 1 TO-252
FEATURES
* 6.5A, 100V, RDS(ON) = 0.2Ω @VGS = 10 V * Fast switching * Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 6N10L-TN3-R 6N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-252 S: Source 1 G Pin Assignment 2 3 D S Packing Tape Reel
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PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Preliminary
SYMBOL VDS VGS ID IDM
Power MOSFET
RATINGS 100 ±20 6.5 8.0 UNIT V V A A mJ W °C °C
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
Continuous Pulsed
Repetitive Avalanche Energy L = 0.1 mH EAR 1.25 (Duty Cycle ≤1%) Power Dissipation PD 16 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 100 7.5 UNIT °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-486.a
6N10
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current On-State Drain Current (Note 2) ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 2) Forward Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
SYMBOL BVDSS IDSS IGSS ID(on) VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=80V, VGS=0V VDS=80V, VGS=0V, TJ=125°C VDS=80V, VGS=0V, TJ=175°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=5V, VGS=10V VDS=VGS, ID=250µA VGS=10V, ID=3A VGS=10V, ID=3A, TJ=125°C VGS=10V, ID=3A, TJ=175°C VGS=4.5, ID=1.0A VDS=15V, ID=3A MIN 100 1 50 250 +100 -100 8.0 1.0 3.0 0.160 0.200 0.350 0.450 0.180 0.225 8.5 240 42 17 2.7 0.6 0.7 7 8 8 9 4.0 TYP MAX UNIT V µA nA nA A V Ω S pF pF pF nC nC nC ns ns ns ns A V ns
Forward Transconductance (Note 2) gFS DYNAMIC PARAMETERS (Note1) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 3) QG VDS=50V, VGS=5V, ID=6.5A Gate to Source Charge (Note 3) QGS Gate to Drain Charge (Note 3) QGD Turn-ON Delay Time (Note3) tD(ON) VDD=50V, RL=7.5Ω, ID≈6.5A, Rise Time (Note 3) tR VGEN=10V, RG=2.5 Ω Turn-OFF Delay Time (Note 3) tD(OFF) Fall-Time (Note 3) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage (Note 2) VSD IF=6.5A, VGS=0V Reverse Recovery Time tRR IF=6.5A, di/dt=100A/µs Notes: 1. Guaranteed by design, not subject to production testing. 2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%. 3. Independent of operating temperature.
11 12 12 14 8.0
0.9 35
1.3 60
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N10
Preliminary
Power MOSFET
U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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www.unisonic.com.tw
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