70N06L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 70N06 70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1 Power MOSFET 1 TO-220 TO-262 FEATURES * RDS(ON) = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability 1 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 70N06L-TA3-T 70N06G-TA3-T 70N06L-T2Q-T 70N06G-T2Q-T 70N06L-TQ2-T 70N06G-TQ2-T 70N06L-TQ2-R 70N06G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source 70N06L-TA3-T (1) Packing Type (2) Package Type (3) Lead Plating (1) R: Tape Reel, T: Tube (2) TA3: TO-220, T2Q: TO-262, TQ2: TO-263 (3) G: Halogen Free, L: Lead Free Package TO-220 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-089.C 70N06 ABSOLUTE MAXIMUM RATINGS Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC = 25°C 70 A Continuous Drain Current ID TC = 100°C 56 A Drain Current Pulsed (Note 2) IDM 280 A Single Pulsed (Note 3) EAS 600 mJ Avalanche Energy Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Power Dissipation PD 200 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Repeativity rating: pulse width limited by junction temperature L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 1.2 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V MIN 60 1 100 -100 0.08 2.0 12 3300 530 80 12 79 80 52 90 20 30 4.0 15 TYP MAX UNIT V μA nA nA V/°C V mΩ pF pF pF ns ns ns ns nC nC nC △BVDSS/△TJ ID = 1mA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 μA VGS = 10 V, ID = 35 A VGS = 0 V, VDS = 25 V f = 1MHz VDD = 30V, VGS=10V,ID =70 A (Note 1, 2) VDS = 60V, VGS = 10 V, ID = 48A (Note 1, 2) 140 35 45 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-089.C 70N06 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 70A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 70A dIF / dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. Power MOSFET MIN TYP MAX 1.4 70 UNIT V A 280 90 300 ns μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-089.C 70N06 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-089.C 70N06 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD VDS VGS RG 10% tD(ON) tR Power MOSFET VDS 90% 10V Pulse Width≤1μs Duty Factor≤0.1% D.U.T. VGS tD(OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 12V 50kΩ 0.2μF 0.3μF Same Type as D.U.T. 10V QGS VDS VGS DUT 1mA QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS R G VDD D.U.T. 10V tp Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-089.C 70N06 Capacitance (pF) Drain-Source On-Resistance, RDS(ON) (mΩ) Drain Current, ID (A) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD Reverse Drain Current, ISD (A) Drain Current, ID (A) 25 °С www.unisonic.com.tw 1 50 °С Gate-to-Source Voltage, VGS (V) 6 of 8 Power MOSFET QW-R502-089.C 70N06 Thermal Response, ZθJC (t) Drain Current , ID,(A) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) www.unisonic.com.tw 7 of 8 Power MOSFET QW-R502-089.C 70N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-089.C