UNISONIC TECHNOLOGIES CO., LTD 75N75
75Amps, 75Volts N-CHANNEL POWER MOSTFET
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
1
Power MOSFET
TO- 251
1
TO-252
1
TO-220
FEATURES
* RDS(ON) = 12.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
1
TO-220F
*Pb-free plating product number: 75N75L
SYMBOL
2.Drain
1 .Gate
3.Source
ORDERING INFORMATION
Order Number Package Normal Lead Free Plating 75N75-TA3-T 75N75L-TA3-T TO-220 75N75-TF3-T 75N75L-TF3-T TO-220F 75N75-TM3-T 75N75L-TM3-T TO-251 75N75-TN3-R 75N75L-TN3-R TO-252 75N75-TN3-T 75N75L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube
75N75L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating Blank: Pb/Sn ,
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QW-R502-097,A
75N75
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain to Source Voltage SYMBOL VDSS
Power MOSFET
RATINGS UNIT 75 V TC = 25℃ 75 A ID Continuous Drain Current TC = 100℃ 56 A Drain Current Pulsed (Note 1) IDM 300 A ±20 Gate to Source Voltage VGS V Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy 300 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25℃ 220 W Total Power Dissipation PD Derating above 25℃ 1.4 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Thermal Resistance Case-Sink SYMBOL θJA θJC θCS MIN TYP MAX 62.5 0.8 UNIT ℃/W ℃/W ℃/W
0.5
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS TEST CONDITIONS MIN 75 0.08 20 250 100 -100 2.0 12.5 3300 530 80 12 79 80 52 90 20 30 4.0 15 TYP MAX UNIT V V/℃ µA µA nA nA V mΩ pF pF pF ns ns ns ns nC nC nC
VGS = 0 V, ID = 250 µA ID = 1mA, △BVDSS/△TJ Referenced to 25℃ VDS = 75 V, VGS = 0 V IDSS VDS = 75 V, VGS = 0 V, TJ = 150℃ VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 µA VGS = 10 V, ID = 48 A
VGS = 0 V, VDS = 25 V f = 1MHz
VDD = 38V, ID =48A, VGS=10V, (Note 4, 5) VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5)
140 35 45
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QW-R502-097,A
75N75
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Source-Drain Diode Ratings and Characteristics Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD IS = 48A, VGS = 0 V IS = 48A, VGS = 0 V Reverse Recovery Time trr dIF / dt = 100 A/µs Reverse Recovery Charge Qrr Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. MIN
Power MOSFET
TYP
MAX 75 300 1.4
UNIT A V ns µC
90 300
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QW-R502-097,A
75N75
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-097,A
75N75
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width ≤ 1μs Duty Factor ≤0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
5 0kΩ 12V 0.2μF 0.3 μF
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 1mA VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RD
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-097,A
75N75
TYPICAL CHARACTERISTICS
On-State Characteristics
V GS Top: 15V 10 V 8V 7V 102 6V 5 .5V 5V Bottorm : 4.5V
Power MOSFET
Transfer Characteristics
Drain Current, ID (A)
Drain Current, ID (A)
25 ℃
101
4.5V
10 1
1 50
102
℃
Note: 1. VDS=25V 2. 20µs Pulse Test 100 2 45 67 8 9 10 3 Gate-Source Voltage, VGS (V)
100
10-1
101 10 0 Drain-Source Voltage, VDS (V)
Drain-Source On-Resistance, RDS(ON) (mΩ)
15
On-Resistance Variation vs Drain . Current and Gate Voltage Reverse Drain Current, ISD (A)
Reverse Drain Current vs. Allowable Case Temperature 102
14
13
VGS=10V
150℃ 10 1 25℃ *Note: 1. VGS=0V 2. 250µs Test 1.6
12
11
0
10 20 30 40 50 60 70 80 90 100 Drain Current, I D (A)
10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage VSD (V) ,
6000 5000
Gate-to-Source Voltage, VGS (V)
C apacitance Characteristics (Non-Repetitive) CISS=CGS+C GD (CDS=shorted) COSS =CDS+C GD CRSS=CGD C ISS
Gate Charge Characteristics 12 10 8 6 4 2 0 0 *Note: ID=48A 5 10 15 20 25 30 35 40 45 Total Gate Charge, Q G (nC) VDS=38V VDS=60V
Capacitance (pF)
4 000 3000 2000 1000
COSS 0
CRSS
*Note: 1. VGS=0V 2. f = 1MHz
5 10 15 20 25 30 35 Drain-Source Voltage, VDC (V)
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QW-R502-097,A
75N75
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs . Junction Temperature
Power MOSFET
Drain-Source On-Resistance, RDS(ON), (Normalized)
Drain-Source Breakdown Voltage, BVDSS(Normalized)
1.2 1.1
3.0 2.5 2.0 1.5 1.0 0.5
On-Resistance Variation vs . Junction Temperature
1.0 *Note: 1. VGS=0V 2. ID=250µA -50 0 50 100 150 200
0.9
*Note: 1. VGS=10V 2. I D=3.5A
0.8 -100
Junction Temperature, T J (℃)
0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃)
Maximum Safe Operating 100 Operation in This Area by RDS(ON) 70 60
Maximum Drain Current vs. Case Temperature
Drain Current , ID,(A)
Drain Current, ID (A)
10
100µs 10ms DC 1ms
50 40 30 20 10 0 25 50 75 100 125 150
1
0.1 1
*Note: 1. T c=25 ℃ 2. T J=150℃ 3. Single Pulse 10 100 1000 Drain-Source Voltage, VD (V)
Case Temperature, T C (℃)
Transient Thermal Response Curve
Thermal Response, ZθJC (t)
1
D=0.5 0.2
0.1
0.1
0.05 0.02 0.01 Single pulse
*Note: 1. ZθJ C ( t) = 0.88 ℃/W Max. 2. Duty Factor , D=t1/t2 3. TJ - TC =PDM×ZθJ C (t)
0.01
10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration t 1 (sec) ,
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QW-R502-097,A
75N75
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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QW-R502-097,A