75N75L-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 75N75 75Amps, 75Volts N-CHANNEL POWER MOSTFET DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1 Power MOSFET TO- 251 1 TO-252 1 TO-220 FEATURES * RDS(ON) = 12.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220F *Pb-free plating product number: 75N75L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 75N75-TA3-T 75N75L-TA3-T TO-220 75N75-TF3-T 75N75L-TF3-T TO-220F 75N75-TM3-T 75N75L-TM3-T TO-251 75N75-TN3-R 75N75L-TN3-R TO-252 75N75-TN3-T 75N75L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube 75N75L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd. 1 of 8 QW-R502-097,A 75N75 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to Source Voltage SYMBOL VDSS Power MOSFET RATINGS UNIT 75 V TC = 25℃ 75 A ID Continuous Drain Current TC = 100℃ 56 A Drain Current Pulsed (Note 1) IDM 300 A ±20 Gate to Source Voltage VGS V Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy 300 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25℃ 220 W Total Power Dissipation PD Derating above 25℃ 1.4 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Thermal Resistance Case-Sink SYMBOL θJA θJC θCS MIN TYP MAX 62.5 0.8 UNIT ℃/W ℃/W ℃/W 0.5 ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS TEST CONDITIONS MIN 75 0.08 20 250 100 -100 2.0 12.5 3300 530 80 12 79 80 52 90 20 30 4.0 15 TYP MAX UNIT V V/℃ µA µA nA nA V mΩ pF pF pF ns ns ns ns nC nC nC VGS = 0 V, ID = 250 µA ID = 1mA, △BVDSS/△TJ Referenced to 25℃ VDS = 75 V, VGS = 0 V IDSS VDS = 75 V, VGS = 0 V, TJ = 150℃ VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 µA VGS = 10 V, ID = 48 A VGS = 0 V, VDS = 25 V f = 1MHz VDD = 38V, ID =48A, VGS=10V, (Note 4, 5) VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5) 140 35 45 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-097,A 75N75 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source-Drain Diode Ratings and Characteristics Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD IS = 48A, VGS = 0 V IS = 48A, VGS = 0 V Reverse Recovery Time trr dIF / dt = 100 A/µs Reverse Recovery Charge Qrr Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. MIN Power MOSFET TYP MAX 75 300 1.4 UNIT A V ns µC 90 300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-097,A 75N75 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-097,A 75N75 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 12V 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 1mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-097,A 75N75 TYPICAL CHARACTERISTICS On-State Characteristics V GS Top: 15V 10 V 8V 7V 102 6V 5 .5V 5V Bottorm : 4.5V Power MOSFET Transfer Characteristics Drain Current, ID (A) Drain Current, ID (A) 25 ℃ 101 4.5V 10 1 1 50 102 ℃ Note: 1. VDS=25V 2. 20µs Pulse Test 100 2 45 67 8 9 10 3 Gate-Source Voltage, VGS (V) 100 10-1 101 10 0 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance, RDS(ON) (mΩ) 15 On-Resistance Variation vs Drain . Current and Gate Voltage Reverse Drain Current, ISD (A) Reverse Drain Current vs. Allowable Case Temperature 102 14 13 VGS=10V 150℃ 10 1 25℃ *Note: 1. VGS=0V 2. 250µs Test 1.6 12 11 0 10 20 30 40 50 60 70 80 90 100 Drain Current, I D (A) 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage VSD (V) , 6000 5000 Gate-to-Source Voltage, VGS (V) C apacitance Characteristics (Non-Repetitive) CISS=CGS+C GD (CDS=shorted) COSS =CDS+C GD CRSS=CGD C ISS Gate Charge Characteristics 12 10 8 6 4 2 0 0 *Note: ID=48A 5 10 15 20 25 30 35 40 45 Total Gate Charge, Q G (nC) VDS=38V VDS=60V Capacitance (pF) 4 000 3000 2000 1000 COSS 0 CRSS *Note: 1. VGS=0V 2. f = 1MHz 5 10 15 20 25 30 35 Drain-Source Voltage, VDC (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-097,A 75N75 TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs . Junction Temperature Power MOSFET Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) 1.2 1.1 3.0 2.5 2.0 1.5 1.0 0.5 On-Resistance Variation vs . Junction Temperature 1.0 *Note: 1. VGS=0V 2. ID=250µA -50 0 50 100 150 200 0.9 *Note: 1. VGS=10V 2. I D=3.5A 0.8 -100 Junction Temperature, T J (℃) 0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) Maximum Safe Operating 100 Operation in This Area by RDS(ON) 70 60 Maximum Drain Current vs. Case Temperature Drain Current , ID,(A) Drain Current, ID (A) 10 100µs 10ms DC 1ms 50 40 30 20 10 0 25 50 75 100 125 150 1 0.1 1 *Note: 1. T c=25 ℃ 2. T J=150℃ 3. Single Pulse 10 100 1000 Drain-Source Voltage, VD (V) Case Temperature, T C (℃) Transient Thermal Response Curve Thermal Response, ZθJC (t) 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse *Note: 1. ZθJ C ( t) = 0.88 ℃/W Max. 2. Duty Factor , D=t1/t2 3. TJ - TC =PDM×ZθJ C (t) 0.01 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration t 1 (sec) , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-097,A 75N75 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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