UNISONIC TECHNOLOGIES CO., LTD 75N75
80Amps, 75Volts N-CHANNEL POWER MOSFET
1
Power MOSFET
TO-263
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1
TO-220
FEATURES
* RDS(ON) = 9.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
1
TO-220F
Lead-free: 75N75L Halogen-free:75N75G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating Halogen Free 75N75-TA3-T 75N75L-TA3-T 75N75G-TA3-T 75N75-TF3-T 75N75L-TF3-T 75N75G-TF3-T 75N75-TQ2-T 75N75L-TQ2-T 75N75G-TQ2-T 75N75-TQ2-R 75N75L-TQ2-R 75N75G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel
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75N75
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) SYMBOL VDSS VGSS ID IDM EAS dv/dt
Power MOSFET
RATINGS UNIT 75 V ±20 V TC = 25°C 80 A 320 A 700 mJ 12 V/ns TO-220/TO-263 300 W Power Dissipation PD TO-220F 45 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting TJ=25°C, ID=40A, VDD=37.5V 4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case TO-220/TO-263 TO-220F TO-220/TO-263 TO-220F SYMBOL θJA θJC RATINGS 62.5 62.5 0.5 3.33 UNIT °C /W °C /W °C /W °C /W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS = 0 V, ID = 250 µA VDS = 75 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A VGS = 0 V, VDS = 25 V f = 1MHz MIN 75 1 100 -100 2.0 3.0 9.5 3700 730 240 25 100 66 30 117 27 47 4.0 11 TYP MAX UNIT V µA nA nA V mΩ pF pF pF ns ns ns ns nC nC nC
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 37.5V, ID =45A, VGS=10V, RG=4.7Ω VDS = 60V, VGS = 10 V ID = 80A
160
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QW-R502-097.E
75N75
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD VGS = 0 V, IS = 80A Continuous Source Current IS Pulsed Source Current (Note 1) ISM IS = 80A, VDD = 25 V Reverse Recovery Time tRR dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note: 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Power MOSFET
MIN
TYP MAX UNIT 1.5 80 320 132 660 V A A ns µC
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QW-R502-097.E
75N75
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VD
S
+ L
RG Drive r * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
VGS
Same Type as D.U.T.
1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period VGS=10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD di/dt
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-097.E
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
2A Switching Test Circuit
2B Switching Waveforms
3A Gate Charge Test Circuit
3B Gate Charge Waveform
4A Unclamped Inductive Switching Test Circuit
4B Unclamped Inductive Switching Waveforms
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QW-R502-097.E
75N75
TYPICAL CHARACTERISTICS
Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) 200 150 100 50 0 0 0.5 1 1.5 2.0 2.5 3.0 3.5 4.0 Drain Current, ID (µA) 450 400 350 300 250 200 150 100 50 0 0 20 40
Power MOSFET
Drain Current vs. Drain-Source Breakdown Voltage
60
80
100
Gate Threshold Voltage, VTH (V) Drain-Source On-State Resistance Characteristics
Drain-Source Breakdown Voltage, BVDSS(V) Drain Current vs. Source to Drain Voltage 12 10
2 1.8 1.6 Drain Current, ID (A) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0
VGS=10V ID=1A
VGS=10V ID=20A
Drain Current, ID (A)
8 6 4 2 0
50
100
150
200
0
0.2
0.4
0.6
0.8
1.0
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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