7N10G-AA3-R

UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N10 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters,. FEATURES * Low Gate Charge: 5.8 nC (TYP.) * Low CRSS: 10 pF (TYP.) * 7A, 100V, RDS(ON) = 0.35Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability SYMBOL (2)D (1) G (3)S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N10L-AA3-R 7N10G-AA3-R 7N10L-TN3-R 7N10G-TN3-R Package SOT-223 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±25 V Continuous Drain TC =25°C ID 7 A Current TC = 70°C ID 6.8 A Pulsed Drain Current (Note 2) IDM 16 A Avalanche Current (Note 2) IAR 7 A Repetitive Avalanche Energy (Note 2) EAR 0.2 mJ Single Pulsed Avalanche Energy (Note 3) EAS 50 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns SOT-223 2.0 TC =25°C W TO-252 2.5 Power Dissipation PD SOT-223 0.016 Derate above 25°C W/°C TO-252 0.02 Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L =26mH, IAS =1.7A, VDD =25V, RG =25Ω Starting TJ =25°C 4. ISD ≤7.3A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ =25°C THERMAL DATA SYMBOL SOT-223 Junction to Ambient θJA TO-252 Note: When mounted on the minimum pad size recommended (PCB Mount) PARAMETER RATINGS 62.5 50 UNIT °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL BVDSS TEST CONDITIONS VGS =0V, ID =250µA MIN 100 0.1 1 10 ±100 2.0 0.28 1.85 190 60 10 5.8 1.4 2.5 7 24 13 19 4.0 0.35 TYP MAX UNIT V V/°C µA µA nA V Ω S pF pF pF nC nC nC ns ns ns ns 2 of 6 QW-R502-394.d ΔBVDSS/ΔTJ Reference to 25°C ,ID =250µA IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF VDS =100V, VGS =0V VDS =80V, TC =125°C VGS =±25V, VDS =0V VDS = VGS, ID =250µA VGS =10V, ID =3.5A VDS =40V, ID =0.85A(Note 1) VDS =25V, VGS=0V, f=1.0MHz 250 75 13 7.5 VGS=10V, VDS=80V, ID=7.3A (Note 1,2) VDD=50V, ID=7.3A, RG=25Ω (Note 1,2) 25 60 35 50 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7N10 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS =7A, VGS =0V Reverse Recovery Time tRR VGS =0V,IS =7.3A,diF/dt=100A/µs Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature TYP MAX 7 16 1.5 70 150 UNIT A A V ns nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-394.d 7N10 Gate Charge Test Circuit Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-394.d