UNISONIC TECHNOLOGIES CO., LTD 7N50
Preliminary Power MOSFET
7 Amps, 500 Volts N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
TO-220
1
TO-220F1
FEATURES
* 7A, 500V, RDS(ON)=0.9Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 7N50L-TA3-T 7N50G-TA3-T 7N50L-TF1-T 7N50G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube
Note:
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PARAMETER Drain-Source Voltage Gate-Source Voltage
Preliminary
SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
RATINGS UNIT 500 V ±30 V Continuous (TC=25°C) 7* A Drain Current Pulsed (Note 1) 28 * A Avalanche Current (Note 1) 7 A Single Pulsed (Note 2) 270 mJ Avalanche Energy Repetitive (Note 3) 8.9 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns TO-220 89 TC=25°C W TO-220F1 39 PD Power Dissipation TO-220 0.71 Derate above 25°C W/°C TO-220F1 0.31 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F1 TO-220 TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 1.4 3.2 UNIT °C/W °C/W
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PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
SYMBOL BVDSS IDSS IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=500V, VGS=0V VDS=400V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V MIN TYP MAX UNIT 500 V 1 µA 10 +100 nA -100 nA 4.0 0.9 V Ω pF pF pF nC nC nC ns ns ns ns A A V ns µC
ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=7A Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=250V, ID=7A, RG=25Ω Rise Time tR (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=7A, VGS=0V IS=7A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Time tRR (Note 4) Body Diode Reverse Recovery Charge QRR Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
2.0 0.76
720 940 95 190 9 13.5 12.8 16.6 3.7 5.8 6 20 55 120 25 60 35 80 7 28 1.4 275 0.04
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www.unisonic.com.tw
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Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms VGS QG
Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS
10V QGS
QGD
Charge
Unclamped Inductive Switching Test Circuit VDS RG ID
Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD
10V tP DUT VDD VDD
VDS(t) Time
tP
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Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT RG
+ VDS L ISD
VGS
VDD Driver Same Type as DUT
dv/dt controlled by RG ISD controlled by pulse period
VGS (Driver)
D=
Gate Pulse Width Gate Pulse Period
10V
IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
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Preliminary
Power MOSFET
U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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