7N60

UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 Power MOSFET TO-220 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. 1 TO-220F FEATURES * RDS(ON) = 1.0Ω @VGS = 10 V (7N60/7N60-R) RDS(ON) = 1.2Ω @VGS = 10 V (7N60-F/7N60-M/7N60-Q) * Ultra Low Gate Charge (Typical 29 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 16pF ) * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness 1 TO-220F1 1 TO-262 SYMBOL 1 TO-263 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-x-TA3-T 7N60G-x-TA3-T 7N60L-x-TF3-T 7N60G-x-TF3-T 7N60L-x-TF1-T 7N60G-x-TF1-T 7N60L-x-T2Q-T 7N60G-x-T2Q-T 7N60L-x-TQ2-R 7N60G-x-TQ2-R 7N60L-x-TQ2-T 7N60G-x-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-076,Ja 7N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL 7N60-A 7N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A Continuous ID 7.4 A Drain Current 29.6 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 530 mJ Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 142 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-262/TO-263 Junction to Ambient TO-220F/TO-220F1 TO-220/TO-262/TO-263 Junction to Case TO-220F/TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 0.88 2.6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Forward Reverse 7N60-A 7N60-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA MIN TYP MAX UNIT 600 650 1 100 -100 0.67 2.0 4.0 1.0 1.2 1.2 1.2 1.0 1400 180 21 70 170 140 130 V V μA nA nA V/°C V Ω Ω Ω Ω Ω pF pF pF ns ns ns ns 2 of 6 QW-R502-076,Ja VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V I = 250μA, △BVDSS/△TJ D Referenced to 25°C VGS(TH) VDS = VGS, ID = 250μA 7N60 7N60-F VGS = 10V, ID = 3.7A 7N60-M 7N60-Q 7N60-R Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time CISS COSS CRSS tD(ON) tR tD(OFF) tF VDS=25V, VGS=0V, f=1.0 MHz 16 VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10 V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 29 7 14.5 38 nC nC nC V A A ns μC 1.4 7.4 29.6 320 2.4 CLASSIFICATION OF RDS(ON) RANK VALUE 1.0Ω F 1.2Ω M 1.2Ω Q 1.2Ω R 1.0Ω UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-076,Ja 7N60 TEST CIRCUITS AND WAVEFORMS + VDS + L Power MOSFET D.U.T. RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-076,Ja 7N60 TEST CIRCUITS AND WAVEFORMS (Cont.) RL Power MOSFET VDS VGS RG VDD 10V Pulse Width≤ 1μs Duty Factor≤0.1% D.U.T. Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 12V 0.2µF 50kΩ 0.3µF Same Type as D.U.T. VDS VGS DUT 3mA Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDD VDS(t) tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-076,Ja 7N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-076,Ja