7N60AL-X-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 7N60A 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply. Power MOSFET FEATURES * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness *Pb-free plating product number:7N60AL SYMBOL ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 7N60A-x-TA3-T 7N60AL-x-TA3-T TO-220 7N60A-x-TF3-T 7N60AL-x-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-111.,A 7N60A ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL 7N60A-A 7N60A-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 7 A TC = 25°C 7 A ID Continuous Drain Current 3.2 A TC = 100°C Pulsed Drain Current (Note 1) IDM 28 A Single Pulsed (Note 2) EAS 330 mJ Avalanche Energy Repetitive Limited by TJ(MAX) EAR 7.5 mJ Power Dissipation PD 30 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC SYMBOL 7N60A-A 7N60A-B BVDSS MIN TYP MAX 62.5 4.16 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage TEST CONDITIONS VGS = 0V, ID = 250µA MIN TYP MAX UNIT 600 650 1 ±100 2.0 1.0 4.0 1.2 V V µA nA V Ω pF pF pF ns ns ns ns nC nC nC V A A ns µC 2 of 7 QW-R502-111.,A Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V Gate-Source Leakage Current IGSS VDS = ±30V, VGS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.5A (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=300V, ID =7A, RG =25Ω (Note 3, 4) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=300V, ID=7A, VGS=10 V Gate-Source Charge QGS (Note 3, 4) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage (Note 4) VSD VGS = 0V, IS = 7A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current (Note 1) Reverse Recovery Time tRR VGS = 0V, IS = 7A, dIF / dt = 100A/µs Reverse Recovery Charge QRR 950 1430 85 130 12 18 16 60 80 65 28 5.5 11 42 8.3 17 1.4 7 28 365 4.23 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7N60A ELECTRICAL CHARACTERISTICS(Cont.) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.8mH, IAS = 7A, VDD=50V, RG = 27 Ω 3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-111.,A 7N60A TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-111.,A 7N60A TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-111.,A 7N60A TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Voltage 20 18 16 14 12 10 8 6 4 2 10-1 2 4 6 8 10 12 14 16 18 20 2 Drain Source Voltage, VDS (V) VGS=-2V 25℃ 4 -55℃ VGS 10V 9V -4.5V 8V 7V 6V 5V Buttom: 4V Top Power MOSFET Drain Current vs. Gate-Source Voltage Note: 1. VDS=10V 2. Pulse test -3V 101 -2.5V 100 150℃ 6 8 10 Gate Source Voltage, VGS (V) Reverse Drain Current vs. Source Drain Voltage Note: 1. VDS=10V 2. Pulse test 101 ON Resistance vs. Drain Current Note: 1. Td=25℃ 2.0 2. Pulsed test 1.5 VGS=20V 1.0 0.8 0 0 5 10 15 20 25 Drain Current, ID (A) Capacitance vs. Drain Source Voltage 10000 CISS 10 2.5 VGS=10V 150℃ 100 25℃ 10-1 0.4 0.6 0.8 1.0 8 1.2 1.4 Source Drain Voltage, VSD (V) Gate Source Voltage vs. Total Gate Charge Note: 1. ID = 7A 2. TC = 25℃ 1000 VDD = 80V VDD = 200V 5 VDD = 300V 100 COSS 10 1 0.1 Note: 1. VGS: 0V 2. f = 1MHz 3. TC = 25℃ 1 10 CRSS 0 100 5 10 15 20 25 30 35 Total Gate Charge, QG (nC) Drain Source Voltage, VDS (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-111.,A 7N60A TYPICAL CHARACTERISTICS (Cont.) Drain-Source Voltage vs. Junction Temperature 1.2 Note: 1. VGS = 0V 2. ID = 250μA Power MOSFET 3.0 2.5 2.0 ON-Resistance vs. Junction Temperature 1.1 1.0 1.5 1.0 0.9 0.5 0.8 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (℃) 0.0 -50 -25 0 Note: 1. VGS = 10V 2. ID = 3.5A 25 50 75 100 125 150 175 Junction Temperature, TJ (℃) UTC assum es no responsibility f or equipm ent f ailures that result f rom using products at v alues that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specif ications of any and all UTC products described or contained herein. UTC products are not designed f or use in lif e support appliances, dev ices or system s where m alf unction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inf orm ation presented in this docum ent does not f orm part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-111.,A