7N60L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Power MOSFET 1 TO-220 1 FEATURES * RDS(ON) = 1Ω @VGS = 10 V * Low gate and reverse transfer Capacitance ( C: 16 pF typical ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness TO-220F *Pb-free plating product number:7N60L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Normal 7N60-TA3-T 7N60-TF3-T Order Number Lead Free Plating 7N60L-TA3-T 7N60L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 7N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-076,B 7N60 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) SYMBOL VDSS VGSS IAR Power MOSFET RATINGS 600 ±30 7.4 TC = 25°C 7.4 ID Continuous Drain Current TC = 100°C 4.7 Pulsed Drain Current (Note 1) IDM 29.6 Avalanche Energy, Single Pulsed (Note 2) EAS 580 Avalanche Energy, Repetitive Limited by TJ(MAX) EAR 14.2 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 Power Dissipation (TC = 25℃) 142 PD Derate above 25℃ 1.14 Junction Temperature TJ +150 Operating and Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V A A A A mJ mJ V/ns W W/℃ ℃ ℃ THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case Case-to-Sink SYMBOL θJA θJC θCS MIN TYP MAX 62.5 0.88 UNIT °C/W °C/W °C/W 0.5 ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS TEST CONDITIONS MIN 600 10 100 100 -100 0.67 2.0 6.4 1400 180 21 70 170 140 130 38 4.0 1.0 TYP MAX UNIT V µA µA nA nA V/℃ V Ω S pF pF pF ns ns ns ns nC nC nC VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V IDSS VDS = 480V, TC = 125°C IGSSF VGS = 30V, VDS = 0V IGSSR VGS = -30V, VDS = 0V △BVDSS/ ID = 250µA, Referenced to △T J 25°C VGS(TH) VDS = VGS, ID = 250µA RDS(ON) VGS = 10V, ID = 3.7A gFS VDS = 50V, ID = 3.7A (Note 4) CISS COSS CRSS td(ON) tR td(OFF) tF QG QGS QGD VDS=25V, VGS=0V, f=1.0 MHz VDD =300V, ID =7.4A, RG =25Ω (Note 4, 5) 29 7 14.5 VDS=480V, ID=7.4A, VGS=10 V (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-076,B 7N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode Forward ISM Current Reverse Recovery Time tRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 7.4 29.6 320 2.4 V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-076,B 7N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-076,B 7N60 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 12V 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 3mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-076,B 7N60 TYPICAL CHARACTERISTICS On-Region Characteristics V GS 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm :5.5V Top: Power MOSFET Transfer Characteristics Drain Current, ID (A) 101 10 0 Drain Current, ID (A) 101 100 150℃ 25℃ 10-1 2 -55℃ *Notes: 1. VDS=50V 2. 250μs Pulse Test 6 8 10 10-1 10-1 *Notes: 1. 250μs Pulse Test 2. TC=25℃ 101 100 Drain-Source Voltage, VDS (V) 4 Gate-Source Voltage, VGS (V) On-Resistance Variation vs. Drain Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) (Ω) Body Diode Forward Voltage Variation vs . Source Current and Temperature Reverse Drain Current, IDR (A) 2.5 2.0 1.5 1.0 0.5 *Note: T J=25℃ 0.0 0 5 10 15 20 25 VGS=10V VGS=20V 101 100 *Notes: 25℃ 1. VGS=0V 2. 250μs Pulse Test 0.6 0.8 1.0 1.2 150℃ 10 -1 0.2 0.4 Drain Current, ID (A) Source-Drain Voltage, VSD (V) Capacitance Characteristics 2000 1800 Ciss 1000 800 C rss 400 0 Coss *Notes: 1. VGS=0V 2. f = 1MHz C iss=C gs+C gd (C ds=shorted) C oss=C ds+Cgd C rss=Cgd 102 ID, Drain Current (A) Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 100μs 1ms 10ms 100 *Notes: 1. Tc=25℃ 2. TJ=150℃ 3. Single Pulse 101 DC Capacitance (pF) 101 10-1 100 101 10-1 100 102 103 Drain-SourceVoltage VDS (V) , Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-076,B 7N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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