UNISONIC TECHNOLOGIES CO., LTD 7N60Z
7.4 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
Power MOSFET
FEATURES
* RDS(ON) = 1Ω @VGS = 10 V * Ultra Low Gate Charge (Typical 29 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 16pF ) * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number Package Lead Free Halogen Free 7N60ZL-x-TA3-T 7N60ZG-x-TA3-T TO-220 7N60ZL-x-TQ2-T 7N60ZG-x-TQ2-T TO-263 7N60ZL-x-TQ2-R 7N60ZG-x-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source 7N60ZL-x-TA3-T (1) Packing Type (2) Package Type (3) Drain-Source Voltage (4) Lead Plating 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tape Reel
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TQ2: TO-263 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER SYMBOL 7N60Z-A 7N60Z-B
Power MOSFET
RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A Continuous Drain Current ID 7.4 A Pulsed Drain Current (Note 1) IDM 29.6 A Single Pulsed (Note 3) EAS 600 mJ Avalanche Energy 14.2 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/ TO-263 142 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current 7N60Z-A 7N60Z-B Forward Reverse TO-220/ TO-263 TO-220/ TO-263 SYMBOL BVDSS IDSS SYMBOL θJA θJC TEST CONDITIONS VGS = 0V, ID = 250μA RATINGS 62.5 0.88 MIN 600 650 1 10 -10 0.67 2.0 4.0 1 1400 180 21 70 170 140 130 38 UNIT °C/W °C/W TYP MAX UNIT V V μA μA μA V/°C V Ω pF pF pF ns ns ns ns nC nC nC
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V Gate- Source Leakage Current IGSS VGS = -30V, VDS = 0V ID = 250μA, Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10 V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD
16
29 7 14.5
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0V, IS = 7.4 A, Reverse Recovery Time tRR dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT 1.4 7.4 29.6 320 2.4 V A A ns μC
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TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source Breakdown Voltage
Power MOSFET
Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) 200 150 100 50 0
300 250 Drain Current, ID (µA) 200 150 100 50 0
0 100 200 300 400 500 600 700 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics
0
0.5 1 2 1.5 2.5 3 3.5 Gate Threshold Voltage, VTH (V)
5
Drain Current vs. Source to Drain Voltage 10 8 6 4 2 0
Drain Current, ID (A)
3 2 1 0 0
VGS=10V ID=3.7A
1 2 3 Drain to Source Voltage, VDS (V)
4
Drain Current, ID (A)
4
0
0.4 0.6 0.8 1.0 1.2 0.2 Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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