7N65L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 7N65 7 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 Power MOSFET TO-220F FEATURES * RDS(ON) = 1.35Ω @VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 18 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 7N65L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Normal 7N65-TF3-T Order Number Lead Free Plating 7N65L-TF3-T Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube 7N65L-TF3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-104,A 7N65 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS Power MOSFET RATINGS UNIT 650 V ±30 V TC = 25°C 7.0 A Continuous Drain Current ID TC = 100°C 4.7 A Drain Current Pulsed (Note 1) IDM 28 A Avalanche Energy, Single Pulsed (Note 2) EAS 530 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TC = 25°C) PD 142 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP MAX 62.5 0.88 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 µA VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V MIN TYP MAX UNIT 650 1 1 100 -100 0.67 2.0 1 8.0 4.0 1.35 V µA µA nA nA V/℃ V Ω S pF pF pF ns ns ns ns nC nC nC Breakdown Voltage Temperature Coefficient ON Characteristics Gate Threshold Voltage Drain-Source ON-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge △BVDSS/△TJ ID = 250 µA, Referenced to 25°C VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4) VDS = 25 V, VGS = 0 V, f = 1MHz 1200 1600 150 190 18 25 35 79 80 52 30 6.5 13 80 165 160 120 VDD = 325V, ID = 7.0 A (Note 4, 5) VDS= 520V, ID= 7.0A, VGS= 10 V (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-104,A 7N65 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =7.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.0 A, dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 Ω, Starting TJ = 25°C 3. ISD ≤ 7.0A, di/dt ≤100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 7.0 28 320 2.4 V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-104,A 7N65 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-104,A 7N65 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 1mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-104,A 7N65 TYPICAL CHARACTERISTICS Power MOSFET Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) Breakdown Voltage Variation vs . Temperature 1.2 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA On-Resistance Junction Temperature 3.0 2.5 2.0 1.5 1.0 0.5 Note: 1. VGS =10V 2. I D=3.5A 0.8 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) 0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) Maximum Safe Operating Area Operation in This Area is Limited by R DS(ON) Maximum Drain Current vs. Case Temperature 8 Drain Current, I D (A) Drain Current, ID (A) 10 100 µs 1ms 10 ms 6 4 2 0 1 DC Notes: 1 . T J=25℃ 2 . T J=150 ℃ 3 . Single Pulse 0.1 1 10 100 1000 25 Drain-Source Voltage, VDS (V) 50 75 100 125 150 Case Temperature, TC (℃) On-State Characteristics 10 Transfer Characteristics Drain Current, I D (A) Drain Current, I D (A) 1 V GS Top: 10V 8 V 7 .5V 7V 6.5V 6V 5.5V Bottorm:5.5V 10 25℃ 1 150℃ Notes: 1. VDS =50 V 2. 250 µs Pulse Test 0.1 Notes: 1. 250µs Pulse Test 2. T C=25℃ 0.1 1 10 Drain-to-Source Voltage, VDS (V) 0.1 2 4 6 8 10 Gate-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-104,A 7N65 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET On State Current vs. Allowable Case Temperature Reverse Drain Current, IDR (A) On-Resistance Variation vs Drain . Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) (ohm) 10 150℃ 25℃ 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Gate Charge Characteristics 12 2.5 2.0 VGS =20V VGS=10V 1.5 1.0 0.5 0 Note: TJ=25℃ 0 5 10 15 20 25 Drain Current, I D (A) Capacitance Characteristics (Non-Repetitive) 2000 1600 G ate-Source Voltage, VGS (V) C iss=C gs +C gd ( C ds=shorted ) C os s=Cds +Cgd Crss=C gd 10 8 6 4 2 0 Capacitance (pF) Ciss Coss Notes: 1. V GS =0V 2. f = 1MHz VDS=520V VDS=325V VDS =130V 1200 800 400 0 0.1 Crss 1 10 Note: ID=7A 0 10 20 30 40 50 60 70 Drain-SourceVoltage VDS (V) , Total Gate Charge, QG (nC) Transient Thermal Response Curve 1 Thermal Response, θJC (t) 0.1 N otes : 1. θJC ( t) = 0. 88℃/W Max. 2. Duty Factor , D=t1/t2 3.TJM-TC=P DM×θJC (t) 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration t1 (sec) , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-104,A 7N65 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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