7N65L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 7N65-ML Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET  1 TO-220F DESCRIPTION The UTC 7N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES 1 TO-220F1 TO-220F2 1 1 TO-252 TO-251 * RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=3.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  1 1 SYMBOL 1 TO-262 TO-263 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N65L-TF1-T 7N65G-TF1-T 7N65L-TF2-T 7N65G-TF2-T 7N65L-TF3-T 7N65G-TF3-T 7N65L-TM3-T 7N65G-TM3-T 7N65L-TN3-R 7N65G-TN3-R 7N65L-T2Q-T 7N65G-T2Q-T 7N65L-TQ2-T 7N65G-TQ2-T 7N65L-TQ2-R 7N65G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube Tube Tape Reel (1) T: Tube, R: Tape Reel 7N65G-TF1-T (1)Packing Type (2)Package Type (3)Green Package www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd (2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F TM3: TO-251, TN3: TO-252, T2Q: TO-262 TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free 1 of 9 QW-R205-598.B 7N65-ML  Power MOSFET MARKING UTC 7N65 Lot Code L: Lead Free G: Halogen Free Date Code 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R205-598.B 7N65-ML  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 14 A Avalanche Energy Single Pulsed (Note 3) EAS 281.3 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.3 V/ns TO-220F/TO-220F1 35 W TO-220F2 Power Dissipation PD TO-251/TO-252 48 W TO-262/TO-263 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATING TO-220F/TO-220F1 TO-220F2/TO-262 62.5 Junction to Ambient θJA TO-263 TO-251/TO-252 110 TO-220F/TO-220F1 3.57 TO-220F2 Junction to Case θJC TO-251/TO-252 2.6 (Note) TO-262/TO-263 1 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W °C/W °C/W °C/W 3 of 9 QW-R205-598.B 7N65-ML  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0V, ID=250μA VDS=650V, VGS=0V VGS=30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=520V, VGS=10V, ID=7A Gate-Source Charge QGS IG=1mA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time (Note 1) tD(ON) Turn-On Rise Time tR VDS=100V, VGS=10V, ID=7A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=7A , VGS=0V Reverse Recovery Time (Note 1) trr IS=7A , VGS=0V di/dt=100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 2.0 10 100 -100 V μA nA nA 4.0 1.3 V Ω 870 97 9.6 pF pF pF 22 5 5.5 12 20 74 33 nC nC nC ns ns ns ns 7 14 1.4 506 2.7 A A V ns μC 4 of 9 QW-R205-598.B 7N65-ML  Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + ISD - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R205-598.B 7N65-ML  Power MOSFET TEST CIRCUITS AND WAVEFORMS RL VDS VDS 90% VGS RG VDD VGS D.U.T. 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Switching Test Circuit Switching Waveforms VGS QG Same Type as D.U.T. QGS VDS QGD VGS DUT Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 9 QW-R205-598.B 7N65-ML TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Voltage Note: 1.TA=25°C VGS=6~10V 2.Pulse test Drain Current, ID (A) 8 7 5.5V 6 5 4 5V 3 2 4.5V 1 Note: 1.TA=25°C 2.Pulse test 4 3 2 7A ID=3.5A 1 0 0 12 2 4 6 8 10 12 6 8 7 Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V) Gate Charge Characteristics Capacitance Characteristics VDS=560V VGS=10V ID=7A Pulsed 1000 Capacitance, C (pF) 10 5 4 8 6 4 CISS 100 COSS 10 CRSS 2 0 1 0 2.5 2 4 8 12 16 20 24 10 20 30 40 50 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature 1.4 VGS=10V ID=3.5A Pulsed 1.5 1 0.5 0 25 0 Total Gate Charge, QG (nC) Drain-Source Breakdown Voltage Normalized Gate-Source Voltage, VGS (V) Drain-Source On-Resistance vs. Gate-Source Voltage 5 Drain-Source On-Resistance, RDS(ON) (Ω) 9 Drain-Source On-Resistance Normalized  Power MOSFET ID=0.25mA Pulsed 1.2 1 0.8 50 75 100 125 150 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 50 75 100 125 150 Junction Temperature, TJ (°C) 7 of 9 QW-R205-598.B 7N65-ML TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature 1.1 Source Current vs. Source-Drain Voltage TA=150°C 10 1 Source Current, IS (A) Gate Threshold Voltage Normalized ID=0.25mA Pulsed 0.9 0.8 25°C 1 0.7 0.6 25 50 75 100 125 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 150 Source-Drain Voltage, VSD (V) Junction Temperature, TJ (°C) Drain Current vs. Gate-Source Voltage 7 Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) 2 TA=25°C Pulsed 6 5 4 3 2 1 0 Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed 1.5 1 0.5 0 2 4 6 8 10 0 1 Power Dissipation vs. Junction Temperature 40 3 4 2 5 6 7 8 9 10 11 Drain Current, ID (A) Gate-Source Voltage, VGS (V) 10.5 TO-220F1 Drain Current vs. Junction Temperature 35 30 Drain Current, ID (A) Power Dissipation, PD (W)  Power MOSFET 25 20 15 10 7 3.5 5 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 8 of 9 QW-R205-598.B 7N65-ML  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Drain Current, ID (A) Safe Operating Area MAX 10 100us 1ms 1 Operation in this area is limited by RDS(ON) 0.1 TO-220F1 TJ=150°C TC=25°C Single Pulse 0.01 10 1 10ms DC 100 1000 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R205-598.B