7N70G-TC-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 7N70-TC Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220  DESCRIPTION The UTC 7N70-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  1 1 TO-220F1 FEATURES TO-251NS2 1 1 * RDS(ON) ≤ 1.7 Ω @ VGS=10V, ID=3.5A * High Switching Speed  TO-220F TO-252 TO-251 SYMBOL 1 2.Drain 1 TO-262 TO-263 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 7N70L-TA3-T 7N70G-TA3-T TO-220 7N70L-TF3-T 7N70G-TF3-T TO-220F 7N70L-TF1-T 7N70G-TF1-T TO-220F1 7N70L-TM3-T 7N70G-TM3-T TO-251 7N70L-TMN2-T 7N70G-TMN2-T TO-251NS2 7N70L-TN3-R 7N70G-TN3-R TO-252 7N70L-T2Q-T 7N70G-T2Q-T TO-262 7N70L-TQ2-T 7N70G-TQ2-T TO-263 7N70L-TQ2-R 7N70G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube Tape Reel (1) T: Tube, R: Tape Reel 7N70G-TA3-T (1)Packing Type (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F (2)Package Type TM3: TO-251, TN3: TO-252, T2Q: TO-262 (3)Green Package TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-427.E 7N70-TC  Power MOSFET MARKING UTC 7N70 Lot Code L: Lead Free G: Halogen Free Date Code 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R205-427.E 7N70-TC  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ± 30 V Continuous ID 7 A Drain Current Pulsed (Note 2) IDM 14 A Avalanche Energy Single Pulsed (Note 3) EAS 80 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.2 V/ns TO-220/TO-262 142 W TO-263 Power Dissipation TO-220F/TO-220F1 PD 40 W TO-251/TO-251NS2 57 W TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 4.0A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-262 TO-263 Junction to Ambient TO-251/TO-251NS2 TO-252 TO-220/TO-262 TO-263 Junction to Case TO-220F/TO-220F1 TO-251/TO-251NS2 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 θJA °C/W 110 0.88 θJC 3.125 °C/W 2.08 3 of 9 QW-R205-427.E 7N70-TC  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0V, ID= 250μA VDS=700V, VGS=0V VGS=30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=100V, VGS=10V, ID=7.0A Gateource Charge QGS IG=1mA (Note 1, 2) Gate-Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) Rise Time tR VDS=100V, VGS=10V, ID=7.0A, RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD VGS=0V, IS=7.0A Reverse Recovery Time (Note 1) trr VGS=0V, IS=7.0A, dIF/dt=100A/µs (Note1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 2.0 10 100 -100 V µA nA nA 4.0 1.7 V Ω 1035 85 2.4 pF pF pF 20 8 4 18 20 56 23 nC nC nC ns ns ns ns 7 28 1.4 330 3.8 A A V ns µC 4 of 9 QW-R205-427.E 7N70-TC  Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + ISD - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R205-427.E 7N70-TC  Power MOSFET TEST CIRCUITS AND WAVEFORMS RL VDS VDS 90% VGS RG VDD VGS D.U.T. 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Switching Test Circuit Switching Waveforms VGS QG Same Type as D.U.T. QGS VDS QGD VGS DUT Charge Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 9 QW-R205-427.E 7N70-TC TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Voltage Note: 1.TA=25°C 2.Pulse test Drain Current, ID (A) 8 VGS=5~10V 4.5V 6 4 4V 2 0 Gate-Source Voltage, VGS (V) 12 4 8 12 16 6 4 ID=3.5A 7A 2 2 4 6 Gate-Source Voltage, VGS (V) Gate Charge Characteristics Capacitance Characteristics CISS 1000 8 6 4 Notes: 1.VGS=0V 2.F=1MHz 100 COSS 10 CRSS 2 0 10 8 Drain-Source Voltage, VDS (V) VDS=100V VGS=10V ID=7A Pulsed 10 Note: 1.TA=25°C 2.Pulse test 8 0 20 Capacitance, C (pF) 0 Drain-Source On-Resistance vs. Gate-Source Voltage 10 Drain-Source On-Resistance, RDS(ON) (Ω) 10 1 0 5 10 15 0 20 Total Gate Charge, QG (nC) 3 Drain-Source On-Resistance vs. Junction Temperature 1.2 VGS=10V ID=3.5A Pulsed 2 1 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 20 30 50 40 Drain-Source Voltage, VDS (V) Drain-Source Breakdown Voltage Normalized 4 Drain-Source On-Resistance Normalized  Power MOSFET Breakdown Voltage vs. Junction Temperature ID=0.25mA Pulsed 1.1 1 0.9 0.8 25 50 75 100 125 150 Junction Temperature, TJ (°C) 7 of 9 QW-R205-427.E 7N70-TC TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature 1.4 Source Current vs. Source-Drain Voltage 100 1.2 Source Current, IS (A) Gate Threshold Voltage Normalized ID=0.25mA Pulsed 1 0.8 10 TA=150°C 25°C 1 0.6 0.4 25 50 100 75 125 0.1 0.2 150 Junction Temperature, TJ (°C) Drain Current vs. Gate-Source Voltage 8 Drain-Source On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) 6 4 2 0 TA=25°C VGS=10V Pulsed 2.2 2 1.8 1.6 1.4 1.2 1 0 2 4 0 8 6 2 4 6 8 10 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Power Dissipation vs. Junction Temperature 60 1.2 0.4 0.8 0.6 1 Source-Drain Voltage, VSD (V) Drain-Source On-Resistance vs. Drain Current 2.4 TA=25°C Pulsed 7 Drain Current vs. Junction Temperature TO-251 6 50 Drain Current, ID (A) Power Dissipation, PD (W)  Power MOSFET 40 30 20 10 0 5 4 3 2 1 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 8 of 9 QW-R205-427.E 7N70-TC  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Safe Operating Area Drain Current, ID (A) 100 10 MAX Operation in this area is limited by RDS(ON) 10 0u s 1m s 10 ms 1 0.1 TO-251 TJ=150°C TC=25°C Single Pulse 0.01 10 1 DC 100 1000 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R205-427.E