UNISONIC TECHNOLOGIES CO., LTD 7N70
7 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 18 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Lead Free Halogen Free 7N70L-TF3-T 7N70G-TF3-T 7N70L-TF1-T 7N70G-TF1-T Package TO-220F TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
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ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS
Power MOSFET
RATINGS UNIT 700 V ±30 V TC = 25°C 7.0 A Continuous Drain Current ID TC = 100°C 4.7 A Drain Current Pulsed (Note 1) IDM 28 A Avalanche Energy, Single Pulsed (Note 2) EAS 530 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220F 142 W Power Dissipation (TC = 25°C) PD TO-220F1 48 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case TO-220F TO-220F1 TO-220F TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 0.88 2.6 UNIT °C/W °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER OFF Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V MIN TYP MAX UNIT 700 1 1 100 -100 0.67 2.0 1.35 8.0 4.0 1.5 V μA μA nA nA V/℃ V Ω S pF pF pF ns ns ns ns nC nC nC
Breakdown Voltage Temperature Coefficient ON Characteristics Gate Threshold Voltage Drain-Source ON-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD VDS = VGS, ID = 250 μA VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4)
VDS = 25 V, VGS = 0 V, f = 1MHz
1200 1600 150 190 18 25 35 79 80 52 30 6.5 13 80 165 160 120
VDD = 350V, ID = 7.0 A (Note 4, 5)
VDS= 560V, ID= 7.0A, VGS= 10 V (Note 4, 5)
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =7.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.0 A, dIF/dt = 100 A/μs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 Ω, Starting TJ = 25°C 3. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT 1.4 7.0 28 320 2.4 V A A ns μC
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8
QW-R502-103,B
UNISONIC TECHNOLOGIES CO., LTD
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7N70
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source Breakdown Voltage, BVDSS (Normalized)
Drain-Source On-Resistance, RDS(ON) (Normalized)
Maximum Safe Operating Area
Operation in This Area is Limited by RDS(ON)
Maximum Drain Current vs. Case Temperature 8 6 4 2 0
10
100µs 1ms 10ms
1
DC Notes: 1. TJ=25℃ 2. TJ=150℃ 3. Single Pulse
0.1 1
10
100
1000
25
Drain-Source Voltage, VDS (V)
50 75 100 125 150 Case Temperature, TC (℃)
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TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
On State Current vs. Allowable Case Temperature 10
On-Resistance Variation vs. Drain Current and Gate Voltage 2.5 2.0 1.5 1.0 0.5 0 0
Note: TJ=25℃
VGS=20V VGS=10V 1
150℃ 25℃
Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V)
5 10 15 20 25 Drain Current, ID (A)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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