7N90L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 7N90 Preliminary Power MOSFET 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N90 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N90 is universally applied in active power factor correction, electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. FEATURES * High switching speed * 7.0A, 900V, RDS(ON)=1.8Ω @ VGS=10V * Typically 40nC low gate charge * 100% avalanche tested * Typically 17pF low CRSS * Improved dv/dt capability SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N90L-TF1-T 7N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220F1 S: Source 1 G Pin Assignment 2 D 3 S Packing Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-475.a 7N90 PARAMETER Drain to Source Voltage Gate to Source Voltage Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS RATINGS UNIT 900 V ±30 V TC=25°C 7.0 A Continuous Drain Current ID TC=100°C 4.4 A Pulsed Drain Current (Note 1) IDM 28 A Avalanche Current (Note 1) IAR 6.4 A Single Pulsed Avalanche Energy (Note 2) EAS 780 mJ Repetitive Avalanche Energy (Note 1) EAR 21 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns Power Dissipation PD 32 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction-to-Case Junction-to-Ambient SYMBOL θJC θJA TYP. MAX. 3.87 62.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-475.a 7N90 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Preliminary SYMBOL BVDSS TEST CONDITIONS Power MOSFET MIN 900 0.96 10 100 100 -100 3.0 1.5 5.7 5.0 1.8 TYP MAX UNIT V V/°C µA µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns μC VGS=0V, ID=250µA ID=250μA, Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Forward IGSS VDS=0V ,VGS=30V Gate-Source Leakage Current VDS=0V ,VGS=-30V Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A Forward Transconductance gFS VDS=50V, ID=3.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=720V, VGS=10V, Gate-Source Charge QGS ID=7.0A (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=450V, ID=7.0A, RG=25Ω (Note 4.,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =7.0A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=7.0A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=30mH, IAS=7.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 1440 1880 140 185 17 23 40 8.5 20 35 80 95 55 52 80 170 200 120 6.4 25.6 1.4 400 4.3 TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-475.a 7N90 Preliminary Peak Diode Recovery dv/dt Test Circuit & Waveforms Power MOSFET DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-475.a 7N90 Gate Charge Test Circuit Preliminary Power MOSFET Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 5 of 6 QW-R502-475.a 7N90 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-475.a