7P20G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 7P20 200V P-CHANNEL MOSFET DESCRIPTION The 7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. They are also well suited for high efficiency switching DC/DC converters. Power MOSFET FEATURES * RDS(ON) ≦ 0.69Ω @VGS = -10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 25 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7P20L-TN3-R 7P20G-TN3-R Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-288.B 7P20 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -200 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -5.7 A Pulsed Drain Current (Note 2) IDM -22.8 A Avalanche Current (Note 2) IAR -5.7 A Single Pulsed Avalanche Energy (Note 3) EAS 570 mJ Repetitive Avalanche Energy (Note 2) EAR 5.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -5.5 V/ns Ta = 25°C 2.5 Power Dissipation W PD TC = 25°C 55 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω 4. ISD≦-7.3A, di/dt≦300A/μs, VDD≦BVDSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 100 2.27 MIN -200 -0.1 -1 ±100 -2.0 0.54 3.7 590 140 25 19 4.6 9.5 15 110 30 42 -4.0 0.69 TYP UNIT °C /W °C /W MAX UNIT V V/°C µA nA V Ω S pF pF pF nC nC nC ns ns ns ns V A A ns µC ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=-250 µA Breakdown Voltage Temperature ID=-250µA, ΔBVDSS/ΔTJ Coefficient Referenced to25°C Drain-Source Leakage Current IDSS VDS=-200V, VGS=0V Gate-Source Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-2.85A Forward Transconductance gFS VDS=-40V, ID=-2.85A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=-25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=-160V, VGS=-10V, Gate Source Charge QGS ID=-7.3A (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=-100V, ID=-7.3A, Turn-ON Rise Time tR RG=25Ω(Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-5.7A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current VGS=0V, IS=-7.30 A Body Diode Reverse Recovery Time tRR dIF/dt=100A/s (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2% Note: 2. Essentially independent of operating temperature 770 180 35 25 40 230 70 90 -5.0 -5.7 -22.8 180 1.07 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-288.B 7P20 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Compliment of D.U.T. (N-Channel) VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM di/dt Body Diode Reverse Current VDS (D.U.T.) VDD Body Diode Recovery dv/dt Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-288.B 7P20 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS tp Time VDD RG VDD D.U.T. tp IAS BVDSS ID(t) VDS(t) -10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-288.B 7P20 TYPICAL CHARACERISTICS 300 250 Drain Current, -ID (µA) 200 150 100 50 0 0 100 150 200 250 50 Drain-Source Breakdown Voltage, -BVDSS(V) Drain Current, -ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 300 250 200 150 100 50 0 0 Power MOSFET Drain Current vs. Gate Threshold Voltage 1 2 5 3 4 Gate Threshold Voltage, -VTH (V) Drain Current, -ID (A) U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current, -ID (A) 5 of 5 QW-R502-288.B