8550SG-D-AE3-R

UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.  1 FEATURES TO-92 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 8550SL-x-AE3-R 8550SG-x-AE3-R 8550SL-x-T92-B 8550SG-x-T92-B 8550SL-x-T92-K 8550SG-x-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector  Package SOT-23 TO-92 TO-92 Pin Assignment 1 2 3 B E C E C B E C B Packing Tape Reel Tape Box Bulk MARKING SOT-23 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-92 1 of 4 QW-R206-002.G 8550S  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( TA=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation(Ta=25°C) SYMBOL VCBO VCEO VEBO IC SOT-23 TO-92 Junction Temperature Storage Temperature PC TJ TSTG RATING -30 -20 -5 -700 UNITS V V V mA 350 1 +150 -40 ~ +150 mW W °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance  VCE(SAT) VBE(SAT) VBE fT Cob TEST CONDITIONS IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC =0 VCE=-1V, IC=-1mA VCE=-1V, IC=-150mA VCE=-1V, IC=-500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN -30 -20 -5 TYP 100 120 40 MAX UNIT V V V -1 μA -100 nA 400 -0.5 -1.2 -1.0 100 9.0 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R206-002.G Capacitance, Cob (pF) Saturation Voltage (mV) Collector Current, Ic (mA) DC Current Gain, hFE Collector Current, Ic (mA) ■ Current Gain-Bandwidth Product, fT(MHz) 8550S PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R206-002.G 3 of 4 8550S PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-002.G