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88CXXL-AF5-R

88CXXL-AF5-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    88CXXL-AF5-R - BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
88CXXL-AF5-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 88CXX BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR 4 CMOS IC DESCRIPTION The UTC 88CXX series are highly accurate, low power consumption voltage detector, manufactured using CMOS process. The detection voltage is fixed internally, with an accuracy of ±2.0%. Besides, UTC 88CXX can easily delay a release signal by attachment of an external capacitor with built-in delay circuit. 5 3 1 2 FEATURES * Highly accurate : 2.0% * Hysteresis characteristics: 5% typ. * Ultra-low current consumption: 1.0μA typ. (VDD=2.0V) * Detection voltage ranges: 1.5~6V and step by 0.1V. * Low operating voltage based on detection voltage * Delay time setting by an additional external capacitor. SOT-25 ORDERING INFORMATION Normal 88CXX-AF5-R Ordering Number Lead Free 88CXXL-AF5-R Halogen Free 88CXXG-AF5-R Package SOT-25 Packing Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 13 QW-R502-040,E 88CXX MARKING INFORMATION PACKAGE 15:1.5V 16:1.6V 17:1.7V 18:1.8V 19:1.9V 20:2.0V 21:2.1V 22:2.2V 23:2.3V 24:2.4V 25:2.5V 26:2.6V 27:2.7V 28:2.8V 29:2.9V VOLTAGE CODE 30:3.0V 31:3.1V 32:3.2V 33:3.3V 34:3.4V 35:3.5V 36:3.6V 37:3.7V 38:3.8V 39:3.9V 40:4.0V 41:4.1V 42:4.2V 43:4.3V 44:4.4V 45:4.5V MARKING CMOS IC SOT-25 46:4.6V 47:4.7V 48:4.8V 49:4.9V 50:5.0V 51:5.1V 52:5.2V 53:5.3V 60:6.0V PIN CONFIGURATION PIN NO. 1 2 3 4 5 PIN NAME VOUT VDD VSS NC CD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 13 QW-R502-040,E 88CXX BLOCK DIAGRAMS CMOS IC VIN VREF + Delay circuit VOUT VSS CD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 13 QW-R502-040,E 88CXX ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified.) PARAMETER CMOS IC SYMBOL RATINGS UNIT Power Supply Voltage VDD-Vss 12 V CD Terminal Input Voltage VCD VSS-0.3 ~ VDD +0.3 V Output Voltage VOUT VSS-0.3 ~ VDD+0.3 V Output Current IOUT 50 mA Power Dissipation PD 250 mW Operating Temperature TOPR -40 ~ +85 °С Storage Temperature TSTG -40 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified.) Detection voltage (1.5V ~ 2.6V) PARAMETER SYMBOL Detect Voltage Hysteresis Range Supply Current Operating Voltage Output Current Detect Voltage Characteristics Delay Time Temperature VDET VHYS ISS VDD IOUT VDD=3.5V Nch VDS=0.5V Pch VDS=0.5V VDD=1.20V VDD=4.8V 0.95 0.23 0.36 TEST CONDITONS MIN -VDET ×0.98 -VDET ×0.03 TYP -VDET -VDET ×0.05 1.2 0.50 0.62 ±100 23 MIN -VDET ×0.98 -VDET ×0.03 0.95 0.23 1.60 0.36 30 TYP -VDET -VDET ×0.05 1.3 0.50 3.70 0.62 ±100 20 28 34 37 MAX -VDET ×1.02 -VDET ×0.08 5.0 10.0 MAX -VDET ×1.02 -VDET ×0.08 5.0 10.0 UNIT V V µA V mA mA ppm/°С ms UNIT V V µA V mA mA mA ppm/°С ms △VDET △TOPR×VDET tDLY VDD=3.5V, CD=4.7nF TEST CONDITONS Detection voltage (2.7V ~ 3.9V) PARAMETER SYMBOL Detect Voltage Hysteresis Range Supply Current Operating Voltage Output Current Detect Voltage Characteristics Delay Time Temperature VDET VHYS ISS VDD IOUT VDD=4.5V Nch VDS=0.5V VDD=1.20V VDD=2.40V VDD=4.8V Pch VDS=0.5V △VDET △TOPR×VDET tDLY VDD=4.5V, CD=4.7nF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 13 QW-R502-040,E 88CXX ELECTRICAL CHARACTERISTICS(Cont.) Detection voltage (4.0V ~ 5.4V) PARAMETER SYMBOL Detect Voltage Hysteresis Range Supply Current Operating Voltage Output Current Detect Voltage Characteristics Delay Time Temperature VDET VHYS ISS VDD IOUT △VDET △TOPR×VDET tDLY VDD=7.0V, CD=4.7nF TEST CONDITONS 12 MIN -VDET ×0.98 -VDET ×0.03 12 0.23 1.60 2.08 VDD=6.0V Nch VDS=0.5V Pch VDS=0.5V VDD=1.20V VDD=2.40V VDD=6.0V 0.95 0.23 1.60 0.46 TEST CONDITONS MIN -VDET ×0.98 -VDET ×0.03 TYP -VDET -VDET ×0.05 1.5 0.50 3.70 0.75 ±100 17 TYP -VDET -VDET ×0.05 1.4 0.50 3.70 3.42 ±100 VDD=7.5V, CD=4.7nF 12 17 CMOS IC MAX -VDET ×1.02 -VDET ×0.08 5.0 10.0 UNIT V V µA V mA mA mA ppm/°С 22 MAX -VDET ×1.02 -VDET ×0.08 5.0 ms UNIT V V µA V mA mA mA ppm/°С Detection voltage (5.5V ~ 6.0V) PARAMETER SYMBOL Detect Voltage Hysteresis Range Supply Current Operating Voltage Output Current Detect Voltage Characteristics Delay Time Temperature VDET VHYS ISS VDD IOUT △VDET △TOPR×VDET tDLY VDD=7.5V Nch VDS=0.5V Pch VDS=0.5V VDD=1.20V VDD=2.40V VDD=4.8V 22 ms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 13 QW-R502-040,E 88CXX DECTECTION VOLTAGE RANGE vs. HYSTERESIS WIDTH DETECTION VOLTAGE RANGE (V) 1.5V±2.0% 1.6V±2.0% 1.7V±2.0% 1.8V±2.0% 1.9V±2.0% 2.0V±2.0% 2.1V±2.0% 2.2V±2.0% 2.3V±2.0% 2.4V±2.0% 2.5V±2.0% 2.6V±2.0% 2.7V±2.0% 2.8V±2.0% 2.9V±2.0% 3.0V±2.0% 3.1V±2.0% 3.2V±2.0% 3.3V±2.0% 3.4V±2.0% 3.5V±2.0% HYSTERESIS WIDTH VHYS TYP (V) 0.075 0.080 0.085 0.090 0.095 0.100 0.105 0.110 0.115 0.120 0.125 0.130 0.135 0.140 0.145 0.150 0.155 0.160 0.165 0.170 0.175 DETECTION VOLTAGE RANGE (V) 3.6V±2.0% 3.7V±2.0% 3.8V±2.0% 3.9V±2.0% 4.0V±2.0% 4.1V±2.0% 4.2V±2.0% 4.3V±2.0% 4.4V±2.0% 4.5V±2.0% 4.6V±2.0% 4.7V±2.0% 4.8V±2.0% 4.9V±2.0% 5.0V±2.0% 5.1V±2.0% 5.2V±2.0% 5.3V±2.0% 6.0V±2.0% CMOS IC HYSTERESIS WIDTH VHYS TYP (V) 0.180 0.185 0.190 0.195 0.200 0.205 0.210 0.215 0.220 0.225 0.230 0.235 0.240 0.245 0.250 0.255 0.260 0.265 0.300 OUTPUT CONFIGURATIONS Implementation With different power supplies With active low reset CPUs With active high reset CPUs With voltage divider variable resistors Example with one power supply VDD CMOS No Yes No No V/D CMOS OUT CD Vss CPU UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 13 QW-R502-040,E 88CXX TYPICAL CHARACTERISTICS 88C25 2.80 2.70 2.60 2.50 2.40 2.30 2.20 -40 -VDET Detection Voltage vs. Temperature Hysteresis Voltage Width,VHYS(%) CMOS IC Hystersis Voltage Width vs. Temperature 8 Detection Voltage,VDET(V) +VDET 7 6 5 4 3 -40 -20 20 0 40 Temperature, Ta(°С) 60 80 -20 20 0 40 Temperature,Ta(°С) 60 80 Current Consumption vs. Input Voltage 3.5 Current Consumption, Iss (μA) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 6 8 4 Input Voltage, VDD (V) 10 12 Ta=25°С Pch Transistor Output Current, IOUT (mA) 20 Pch Transistor Output Current vs VDS Ta=25°С VDD=8.4V 15 VDD=7.2V 10 VDD=6.0V VDD=4.8V 5 VDD=3.6V 0 0 2 4 VDS (V) 6 8 10 1000 Dynamic Response vs. COUT (CD pin; open) Ta=25°С Nch Transistor Output Current, IOUT (mA) tPHL Nch Transistor Output Current - VDS 12 10 8 6 4 2 0 0 VDD=2.4V Ta=25°С Response Time (µs) 100 10 tPLH 1 VDD=1.2V 0.5 1.5 1.0 VDS (V) 2 2.5 0.1 0.1 1 10 100 Load Capacitance (nF) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 13 QW-R502-040,E 88CXX TYPICAL CHARACTERISTICS(Cont.) Current Consumpation vs. Tempreature VDD=3.5V Nch Transistor Output Current ,IOUT(mA) 2.0 Current Consumpation ,ISS(µA) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 0.5 CMOS IC Nch Transisor Output Current vs. Input Voltage VDS=0.5V Ta=-40°С Ta=25°С Ta=85°С 1.5 1.0 0.5 0.0 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 1 1.5 2 2.5 Input Voltage,VDD(V) 3 3.5 4.0 Pch Transistor Output Current, IOUT(mA) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 Pch Transistor Output Current vs. Input Voltage VDS=0.5V Ta=-40°С Delay Time vs Temperature 40 CD=4.7nF 30 Ta=25°С Delay Time,td(ms) 10 12 20 Ta=85°С 10 2 4 6 8 Input Voltage,VDD(V) 0 -40 -20 20 0 40 60 Temperature,Ta(°С) 80 Delay Time vs CD Pin Capacitance 1000 100 Delay Time,td(ms) 10 1 0.1 0.01 0.01 Ta=25°С 10 100 0.1 1 CD Pin Capacitance,CD(nF) 1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 13 QW-R502-040,E 88CXX TYPICAL CHARACTERISTICS(Cont.) 88C28 3.00 2.90 2.80 2.70 2.60 2.50 2.40 -40 -VDET Detection Voltage vs. Temperature Hysteresis Voltage Width,VHYS(%) +VDET Detection Voltage,VDET(V) 8 CMOS IC Hystersis Voltage Width vs. Temperature 7 6 5 4 3 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 -20 20 0 40 Temperature,Ta(°С) 60 80 Current Consumption vs. Input Voltage 3.66 Current Consumption, Iss (μA) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 8 6 Input Voltage, VDD (V) 10 12 Ta=25°С 20 Pch Transistor Output Current, IOUT (mA) Pch Transistor Output Current vs. VDS Ta=25°С VDD=8.4V VDD=7.2V 15 10 VDD=6.0V VDD=4.8V 5 VDD=3.6V 0 0 2 6 4 VDS (V) 8 10 1000 Dynamic Response vs. COUT (CD pin; open) Ta=25°С Nch Transistor Output Current, IOUT (mA) tPHL Nch Transistor Output Current - VDS 12 10 8 6 4 2 0 VDD=2.4V Ta=25°С Response Time (µs) 100 10 tPLH 1 VDD=1.2V 0 0.5 1.5 1.0 VDS (V) 2.0 2.5 0.1 0.1 1 10 Load Capacitance (nF) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 13 QW-R502-040,E 88CXX TYPICAL CHARACTERISTICS(Cont.) Current Consumpation vs. Tempreature 2.0 VDD=4.5V 6.0 5.5 5.0 4.5 4.0 3.5 1.0 3.0 2.5 2.0 0.5 1.5 1.0 0.5 0.0 CMOS IC Nch Transisor Output Current vs. Input Voltage VDS=0.5V 1.5 Ta=-40°С Ta=25°С Ta=85°С 0.0 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 0 0.5 1 1.5 2 2.5 Input Voltage,VDD(V) 3 3.5 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 Pch Transistor Output Current vs. Input Voltage VDS=0.5V Ta=-40°С Delay Time vs. Temperature 50 CD=4.7nF 40 30 Ta=25°С 20 Ta=85°С 10 0 2 4 6 8 Input Voltage,VDD(V) 10 12 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 Delay Time vs. CD Pin Capacitance 10000 Ta=25°С 1000 100 10 1 0.1 0.01 10 100 0.1 1 CD Pin Capacitance,CD(nF) 1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 of 13 QW-R502-040,E 88CXX TYPICAL CHARACTERISTICS(Cont.) 88C33 3.60 Detection Voltage,VDET(V) 3.55 3.50 3.45 3.40 3.35 3.30 -40 -VDET Detection Voltage vs. Temperatyre 8 Hysteresis Voltage Width,VHYS(%) CMOS IC Hystersis Voltage Width vs. Temperature +VDET 7 6 5 4 3 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 -20 20 0 40 Temperature,Ta(°С) 60 80 Current Consumption vs. Input Voltage 4.5 Current Consumption, Iss (μA) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 8 6 Input Voltage, VDD (V) 10 12 0 0 Ta=25°С 20 Pch Transistor Output Current, IOUT (mA) Pch Transistor Output Current vs VDS Ta=25°С VDD=8.4V VDD=7.2V 15 10 VDD=6.0V VDD=4.8V 5 2 4 6 VDS (V) 8 10 1000 Dynamic Response vs. COUT (CD pin; open) Ta=25°С Nch Transistor Output Current, IOUT (mA) tPHL Nch transistor output current - VDS 12 10 8 6 4 2 0 VDD=1.2V 0 0.5 1.5 1.0 VDS (V) 2.0 2.5 VDD=2.4V Ta=25°С Response Time (µs) 100 10 1 tPLH 0.1 0.1 1 10 Load Capacitance (nF) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 11 of 13 QW-R502-040,E 88CXX TYPICAL CHARACTERISTICS(Cont.) Current Consumpation vs. Tempreature VDD=4.5V Nch Transistor Output Current ,IOUT(mA) 2.5 Current Consumpation ,ISS(µA) 6.0 V =0.5V DS 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 0.5 CMOS IC Nch Transisor Output Current vs. Input Voltage 2.0 1.5 Ta=-40°С Ta=25°С Ta=85°С 1.0 0.5 0.0 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 2.5 2 1 1.5 Input Voltage,VDD(V) 3 3.5 Pch Transistor Output Current vs. Input Voltage Pch Transistor Output Current,IOUT(mA) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 Input Voltage,VDD(V) 10 12 Ta=85°С Ta=25°С VDS=0.5V Delay Time vs. Temperature 60 50 Delay Time,td(ms) CD=4.7nF Ta=-40°С 40 30 20 10 0 -40 -20 20 0 40 Temperature,Ta(°С) 60 80 Delay Time vs. CD Pin Capacitance 10000 Ta=25°С 1000 Delay Time,td(ms) 100 10 1 0.1 0.01 10 100 0.1 1 CD Pin Capacitance,CD(nF) 1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 12 of 13 QW-R502-040,E 88CXX CMOS IC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 13 of 13 QW-R502-040,E
88CXXL-AF5-R
1. 物料型号: - 正常型号:88CXX-AF5-R - 无铅型号:88CXXL-AF5-R - 无卤型号:88CXXG-AF5-R - 封装:SOT-25,胶带卷装

2. 器件简介: - UTC 88CXX系列是一种高精度、低功耗的电压检测器,采用CMOS工艺制造。内部检测电压固定,精度为±2.0%。此外,UTC 88CXX可以通过连接外部电容器轻松延迟释放信号,内置延迟电路。

3. 引脚分配: - 1号引脚:VouT(输出电压) - 2号引脚:VDD(电源电压) - 3号引脚:Vss(地) - 4号引脚:NC(无连接) - 5号引脚:CD(延迟时间设置)

4. 参数特性: - 高精度:2.0% - 滞后特性:典型值5%,精度2.0% - 超低电流消耗:典型值1.0μA(VDD=2.0V) - 检测电压范围:1.5~6V,步进0.1V - 基于检测电压的低工作电压 - 通过额外的外部电容器设置延迟时间

5. 功能详解: - 该系列IC具有高精度检测电压和滞后特性,能够提供稳定的电压检测功能。超低的电流消耗使其适用于电池供电的应用。检测电压范围广泛,可以根据需要选择不同的电压检测点。内置的延迟电路允许用户通过外部电容器调整延迟时间,提供灵活的信号控制。

6. 应用信息: - 适用于需要精确电压检测和延迟信号释放的各种应用,如电源管理、电池监控等。

7. 封装信息: - 采用SOT-25封装,适合表面贴装技术,适用于PCB布局和小型化设计。
88CXXL-AF5-R 价格&库存

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