88NXXL-AF5-R

UNISONIC TECHNOLOGIES CO., LTD 88NXX Preliminary CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external capacitor. N-ch open-drain output form is available. The UTC 88NXX is generally used for power supply monitor of portable equipment such as notebook PCs, digital still cameras, PDAs, and mobile phones, constant voltage power monitor of cameras, video equipment and communication equipment, and power monitor or reset of CPUs and microcomputers. FEATURES * Extremely Low Current Dissipation : 1.2μA Typ. (Detection Voltage ≥ 1.5 V @ VDD=3.5 V) * ±2.0 % Accuracy Detection Voltage * Hysteresis Characteristics: 5% TYP * Detection Voltage varies from 1.5V to 6.0V with 0.1V step * Output Forms: N-ch open-drain output (when it is in Active-Low) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 88NXXL-AF5-R 88NXXG-AF5-R 88NXXL-AD4-R 88NXXG-AD4-R Note: XX: Output Voltage, refer to Marking Information. Package SOT-25 SOT-143 Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-368.c 88NXX MARKING INFORMATION PACKAGE VOLTAGE CODE Preliminary CMOS IC MARKING SOT-143 SOT-25 14:1.4V 18:1.8V 21:2.1V 24:2.4V 27:2.7V 28:2.8V 29:2.9V 33:3.3V PIN CONFIGURATION VOUT 4 CD 3 1 2 VSS For SOT-25 VDD For SOT-143 PIN DESCRIPTION PIN NO PIN NAME DESCRIPTION SOT-143 SOT-25 4 1 VOUT Voltage Detection Output Pin 2 2 VDD Voltage Input Pin 1 3 VSS GND Pin 4 NC No Connection (Note) 3 5 CD Connection Pin For Delay Capacitor Note: The NC pin is electrically open and can be connected to VDD or VSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-368.c 88NXX BLOCK DIAGRAM Preliminary CMOS IC VDD + VREF Delay circuit VOUT VSS CD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-368.c 88NXX Preliminary CMOS IC ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Power Supply Voltage VDD - VSS 12 V CD pin Input Voltage VCD VSS -0.3 ~ VDD+0.3 V Output Voltage VOUT VSS -0.3 ~ VSS +12 V Output Current IOUT 50 mA Power Dissipation SOT-143 150 mW PD 250 mW SOT-25 Operating Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -40 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) Detection Voltage: 1.4V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current SYMBOL -VDET VHYS ISS VDD IOUT ILEAK TEST CIRCUIT 1 1 2 1 3 3 1 4 TEST CIRCUIT 1 1 2 1 3 3 1 4 VDD=3.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=1.2V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD=3.5V, CD=4.7 nF 27 0.59 1.36 0.1 ±100 VDD= 2.0V 0.95 Output transistor Nch, VDS=0.5V,VDD=0.95V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD= 2V, CD=4.7 nF 27 0.23 0.64 0.1 ±100 TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 2.5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 Δ - VDET Detection Voltage Temperature ΔTa × - VDET Coefficient (Note 2) Delay Time tD ±350 ppm/°C 42 ms Detection Voltage: 1.8V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current SYMBOL -VDET VHYS ISS VDD IOUT ILEAK TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 2.8 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 Δ - VDET Detection Voltage Temperature ΔTa × - VDET Coefficient (Note 2) Delay Time tD ±350 ppm/°C 42 ms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-368.c 88NXX Detection Voltage: 2.1V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current SYMBOL -VDET VHYS ISS VDD IOUT ILEAK Preliminary CMOS IC ELECTRICAL CHARACTERISTICS(Cont.) (Ta=25°C unless otherwise specified) TEST CIRCUIT 1 1 2 1 3 3 1 4 TEST CIRCUIT 1 1 2 1 3 3 1 4 TEST CIRCUIT 1 1 2 1 3 3 1 4 VDD=4.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD=4.5V, CD=4.7 nF 12 2.88 4.98 0.1 ±100 VDD=3.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=1.2V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD=3.5V, CD=4.7 nF 27 0.59 1.36 0.1 ±100 VDD=3.5 V 0.95 Output transistor Nch, VDS=0.5V, VDD=1.2V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD=3.5V, CD=4.7 nF 27 0.59 1.36 0.1 ±100 TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 Δ - VDET Detection Voltage Temperature ΔTa × - VDET Coefficient (Note 2) Delay Time tD ±350 ppm/°C 42 ms Detection Voltage: 2.4V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current Detection Voltage Temperature Coefficient (Note 2) Delay Time Detection Voltage: 2.7V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current Detection Voltage Temperature Coefficient (Note 2) Delay Time SYMBOL -VDET VHYS ISS VDD IOUT ILEAK Δ - VDET ΔTa × - VDET tD SYMBOL -VDET VHYS ISS VDD IOUT ILEAK Δ - VDET ΔTa × - VDET tD TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 ±350 ppm/°C 42 ms TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 ±350 ppm/°C 27 ms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-368.c 88NXX Detection Voltage: 2.8V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current Detection Voltage Temperature Coefficient (Note 2) Delay Time Detection Voltage: 2.9V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current Detection Voltage Temperature Coefficient (Note 2) Delay Time SYMBOL -VDET VHYS ISS VDD IOUT ILEAK Δ - VDET ΔTa × - VDET tD Preliminary CMOS IC ELECTRICAL CHARACTERISTICS(Cont.) (Ta=25°C unless otherwise specified) TEST CIRCUIT 1 1 2 1 3 3 1 4 TEST CIRCUIT 1 1 2 1 3 3 1 4 VDD=4.5 V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD=4.5V, CD=4.7 nF 12 2.88 4.98 0.1 ±100 VDD=4.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V Ta=-40°C ~ +85°C VDD=4.5V, CD=4.7 nF 12 2.88 4.98 0.1 ±100 SYMBOL -VDET VHYS ISS VDD IOUT ILEAK Δ - VDET ΔTa × - VDET tD TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 ±350 ppm/°C 27 ms TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 ±350 ppm/°C 27 ms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-368.c 88NXX Detection Voltage: 3.3V PARAMETER Detection Voltage (Note 1) Hysteresis Width Current Consumption Operating Voltage Output Current Leakage Current SYMBOL -VDET VHYS ISS VDD IOUT ILEAK Preliminary CMOS IC ELECTRICAL CHARACTERISTICS(Cont.) (Ta=25°C unless otherwise specified) TEST CIRCUIT 1 1 2 1 3 3 VDD=4.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V 2.88 4.98 0.1 TEST CONDITIONS MIN TYP MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 UNIT V V μA V mA μA -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.03 ×0.05 Δ - VDET Detection Voltage Temperature 1 Ta=-40°C ~ +85°C ±100 ±350 ppm/°C ΔTa × - VDET Coefficient (Note 2) Delay Time tD 4 VDD=4.5V, CD=4.7 nF 12 27 ms -VDET: Actual detection voltage Note: 1. -VDET(S): Specified detection voltage 2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation: Δ - VDET Δ - V DET [mV/ °C] (1) = -VDET (Typ.)[ V ]( 2 ) × [ppm / °C]( 3 ) ÷ 1000 ΔTa ΔTa × -VDET (1) Temperature change ratio of the detection voltage (2) Specified detection voltage (3) Detection voltage temperature coefficient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-368.c 88NXX TEST CIRCUITS Preliminary CMOS IC VDD VDD 88NXX Series VOUT 100kΩ V VSS CD V Figure 1 Figure 2 VDD VDD V 88NXX Series VSS VOUT VDD VOUT 100kΩ A P.P. 88NXX Series Oscilloscope VSS CD CD V VDS Figure 3 Figure 4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-368.c