8N50G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 8N50 Preliminary Power MOSFET 8 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 8N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. TO-220 1 TO-220F1 FEATURES * 8A, 500V, RDS(ON)=0.85Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N50L-TA3-T 8N50G-TA3-T 8N50L-TF1-T 8N50G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube Note: www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-546.a 8N50 PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS ID IDM IAR EAS EAR Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT 500 V ±30 V Continuous (TC=25°C) 8(Note 2) A Drain Current Pulsed (Note 3) 32(Note 2) A Avalanche Current (Note 3) 8 A Single Pulsed (Note 4) 320 mJ Avalanche Energy Repetitive (Note 5) 12.5 mJ TO-220 125 TC=25°C W TO-220F1 42 Power Dissipation PD TO-220 1 W/°C Derate above 25°C TO-220F1 0.33 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 10mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F1 TO-220 TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 1 3 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-546.a 8N50 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=8A Gate to Source Charge QGS (Note 6, 7) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=8A, RG=25Ω (Note 6, 7) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V Body Diode Reverse Recovery Time tRR IS=8A, VGS=0V, dIF/dt=100A/µs (Note 6) Body Diode Reverse Recovery Charge QRR Notes: 6. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 7. Essentially independent of operating temperature MIN TYP MAX UNIT 500 V 25 µA +100 nA -100 nA 4.0 0.85 850 1130 115 155 9 13.5 18 5 7.5 15 38 46 33 24 V Ω pF pF pF nC nC nC ns ns ns ns A A V ns µC 2.0 40 86 102 76 8 32 1.6 44 45 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-546.a 8N50 Gate Charge Test Circuit Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-546.a 8N50 Preliminary Peak Diode Recovery dv/dt Test Circuit & Waveforms Power MOSFET DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-546.a 8N50 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-546.a