8N80G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 8N80 Preliminary Power MOSFET 800V N-CHANNEL MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode Power FET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N80 is generally applied in high efficiency switch mode power supplies. 1 TO-220 1 FEATURES * Typically 35 nC Low Gate Charge * 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V * Typically 13 pF Low Crss * Improved dv/dt Capability * Fast Switching Speed * 100% Avalanche Tested * RoHS–Compliant Product TO-220F1 SYMBOL D G S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N80L-TA3-T 8N80G-TA3-T 8N80L-TF1-T 8N80G-TF1-T Note: G: GND, D: Drain, S: Source Package TO-220 TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-471.a 8N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Drain Current (Continuous) (TC=25°C) ID 8 A Drain Current (Pulsed) (Note 1) IDM 32 A Avalanche Current (Note 1) IAR 8 A Single Pulse Avalanche Energy (Note 2) EAS 850 mJ Repetitive Avalanche Energy (Note 1) EAR 17.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation (TC=25°C) 178 W PD Linear Derating Factor above TC=25°C 1.43 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL RATINGS θJA 62.5 θJC 0.7 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 800 Breakdown Voltage Temperature △BVDSS/△TJ Reference to 25°C, ID=250µA 0.5 Coefficient VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Gate- Source Leakage Current IGSS VGS=±30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A 0.94 Forward Transconductance (Note 1) gFS VDS=50V, ID=4A 5.6 DYNAMIC PARAMETERS Input Capacitance CISS 1580 VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 135 13 Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge QG 35 VGS=10V, VDS=640V, ID=8A Gate to Source Charge QGS 10 Gate to Drain Charge QGD 14 Turn-ON Delay Time tD(ON) 40 Rise Time tR 110 VDD=400V, ID=8A, RG=25Ω Turn-OFF Delay Time tD(OFF) 65 Fall-Time tF 70 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V Reverse Recovery Time (Note 1) tRR 690 IS=8A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 1) QRR 8.2 Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNIT °C/W °C/W MAX UNIT V V/°C 10 100 ±100 5.0 1.55 µA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC 2050 175 17 45 90 230 140 150 8 32 1.4 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-471.a 8N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-471.a 8N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-471.a 8N80 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-471.a