8N90L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N90 is generally applied in high efficiency switch mode power supplies. FEATURES * 8A, 900V, RDS(ON)=1.55Ω @ VGS=10V * Fast Switching Speed * 100% Avalanche Tested * Improved dv/dt Capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N90L-TA3-T 8N90G-TA3-T Note: G: GND, D: Drain, S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current (TC=25°C) ID 8 A Pulsed Drain Current (Note 1) IDM 25 A Avalanche Current (Note 1) IAR 6.3 A Single Pulsed Avalanche Energy (Note 2) EAS 850 mJ Repetitive Avalanche Energy (Note 1) EAR 17.1 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns Total Power Dissipation (TC=25°C) 147 W PD Linear Derating Factor above TC=25°C 1.17 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=40mH, IAS=6.3A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL RATINGS θJA 62.5 θJC 0.85 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 Breakdown Voltage Temperature ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C Coefficient VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A Forward Transconductance (Note 1) gFS VDS=50V, ID=4A4 DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge QG VDS=720V, VGS=10V, ID=8A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=450V, ID=8A, RG=25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =8A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=8A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNIT °C/W °C/W TYP MAX UNIT V 0.95 10 100 ±100 5.0 1550 V/°C µA µA nA V mΩ S pF pF pF nC nC nC ns ns ns ns A A V ns μC 940 5.5 1600 2080 130 170 12 15 35 10 14 40 110 70 70 45 90 230 150 150 8 25 1.4 530 5.8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit VGS Gate Charge Waveforms Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QG QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-470.b 8N90 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-470.b