9N80G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N80 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 9N80 is universally applied in high efficiency switch mode power supply. FEATURES * Improved Gate Charge * Lower Input Capacitance * Lower Leakage Current: 25 μA (Max.) @ VDS = 800V * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N80L-TF1-T 9N80G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220F1 S: Source 1 G Pin Assignment 2 3 D S Packing Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-493.b 9N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 9 A Continuous ID 9 A Drain Current (Continuous) 36 A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy Repetitive (Note 1) EAR 24 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 2.0 V/ns Power Dissipation PD 49 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.55 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-493.b 9N80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature △BVDSS/△TJ ID=250µA, Coefficient Drain-Source Leakage Current IDSS VDS=800V Forward VGS=+30V Gate- Source Leakage Current IGSS Reverse VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=5V, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A (Note 4) Forward Transconductance gFS VDS=50V, ID=4.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz, Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=640V, ID=9A, Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=400V, ID=9 A, RG=16Ω, (Note 4. 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral reverse pn-diode in the Maximum Pulsed Drain-Source Diode mosfet ISM Forward Current (Note 1) Drain-Source Diode Forward Voltage VSD IS=9A, VGS=0V, TJ=25°C (Note 4) TJ=25°C, IF=9A, dIF/dt=100A/µs, Reverse Recovery Time tRR (Note 4) Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 9A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 180A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature MIN TYP MAX UNIT 800 0.96 V V/°C 25 µA +100 nA -100 nA 2.0 5.54 2020 2600 195 230 82 95 93 120 14.3 42.1 25 60 37 85 113 235 42 95 9 36 1.4 560 8.4 3.5 1.3 V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-493.b 9N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VF VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-493.b 9N80 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-493.b