9N90-T3P-T

UNISONIC TECHNOLOGIES CO., LTD 9N90 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET 1 FEATURES * RDS(ON) = 1.4Ω @VGS = 10 V * Ultra low gate charge ( typical 45 nC ) * Low reverse transfer capacitance ( CRSS = typical 14 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-3P *Pb-free plating product number: 9N90L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 9N90-T3P-T 9N90L-T3P-T Package TO-3P Pin Assignment 1 2 3 G D S Packing Tube 9N90L-T3P-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) T3P: TO-3P (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., LTD 1 of 8 QW-R502-217.A 9N90 ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25℃) Pulsed Drain Current (Note 1) Avalanche Current (Note 1) Single Pulsed(Note 2) Avalanche Energy Repetitive(Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation Derate above 25℃ SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt Power MOSFET RATINGS UNIT 900 V ±30 V 9.0 A 36 A 9.0 A 900 mJ 28 4.0 V/ns 280 W PD 2.22 W/℃ Junction Temperature TJ 125 ℃ Operating Temperature TOPR -20 ~ +85 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction-to- Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP MAX 40 0.45 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Forward IGSSF Gate-Body Leakage Current Reverse IGSSR Breakdown Voltage Temperature △BVDSS/△TJ Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 900 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ID = 250 μA, Referenced to 25℃ VDS = VGS, ID = 250 μA VGS = 10 V, ID = 4.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3.0 1.12 2100 175 14 50 120 100 75 45 13 18 MIN 900 10 100 -100 0.99 5.0 1.4 2730 230 18 110 250 210 160 58 TYP MAX UNIT V μA nA V/℃ V Ω pF pF pF ns ns ns ns nC nC nC VDD = 4500V, ID =11.0 A, RG = 25Ω (Note 4, 5) VDS = 720V, ID = 11.0A, VGS = 10 V (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-217.A 9N90 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/μs (Note 4) Reverse Recovery Charge QRR Note 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃ 3. ISD ≤ 9.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 9.0 36 V A A ns μC 550 6.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-217.A 9N90 TEST CIRCUIT Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-217.A 9N90 TEST CIRCUIT(Cont.) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-217.A 9N90 TYPICAL CHARACTERISTICS Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-217.A 9N90 Drain Current, ID (A) Drain-Source Breakdown Voltage, BVDSS (Normalized) TYPICAL CHARACTERISTICS(Cont.) UNISONIC TECHNOLOGIES CO., LTD Drain Current, ID (A) 10 ms Drain-Source On-Resistance, RDS(ON) (Normalized) www.unisonic.com.tw Power MOSFET 7 of 8 QW-R502-217.A 9N90 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-217.A