9N90

UNISONIC TECHNOLOGIES CO., LTD 9N90 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 Power MOSFET TO-247 FEATURES * RDS(ON) = 1.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 TO-3P SYMBOL 2.Drain 1 1.Gate TO-220F1 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-TF1-T 9N90G-TF1-T Package TO-247 TO-3P TO-220F1 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., LTD 1 of 6 QW-R502-217.E 9N90 ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25°C) Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed(Note 3) Avalanche Energy Repetitive(Note 2) Peak Diode Recovery dv/dt (Note 4) TO-247 Power Dissipation TO-3P TO-220F1 Linear Derating Factor above TC = 25°C TO-247 TO-3P TO-220F1 SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt RATINGS 900 ±30 9.0 36 9.0 900 28 4.0 160 240 36 1.28 2.22 Power MOSFET UNIT V V A A A mJ mJ V/ns W W W/°C PD W/°C 0.288 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-247 TO-3P TO-220F1 TO-247 TO-3P TO-220F1 SYMBOL θJA RATINGS 50 40 62.5 0.78 0.52 3.47 UNIT °C/W °C/W °C/W °C/W Junction-to-Case θJC ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current Forward Reverse BVDSS IDSS IGSSF IGSSR VGS = 0 V, ID = 250μA VDS = 900 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.99 900 10 100 -100 V μA nA nA V/°C SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance △BVDSS/△TJ ID = 250μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250μA VGS = 10 V, ID = 4.5 A 3.0 1.12 5.0 1.4 V Ω pF pF pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2100 2730 175 14 230 18 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-217.E 9N90 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDS = 720V, ID = 11.0A, VGS = 10 V (Note 1,2) VDD = 450V, ID =11.0 A, RG = 25Ω (Note 1, 2) SYMBOL TEST CONDITIONS Power MOSFET MIN TYP MAX UNIT 50 120 100 75 45 13 18 1.4 9.0 36 550 6.5 110 250 210 160 58 ns ns ns ns nC nC nC V A A ns μC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-217.E 9N90 TEST CIRCUIT Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-217.E 9N90 TEST CIRCUIT(Cont.) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-217.E 9N90 TYPICAL CHARACTERISTICS Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-217.E