UNISONIC TECHNOLOGIES CO., LTD B772SS
MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
PNP SILICON TRANSISTOR
3
1
FEATURES
* High current output up to 3A * Low saturation voltage * Complement to D882SS
2 SOT-23
*Pb-free plating product number: B772SSL
ORDERING INFORMATION
Order Number Normal Lead Free Plating B772SS-x-AE3-R B772SSL-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel
B 772SSL-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
B72 Lead Plating
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QW-R206-089,B
B772SS
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO ICP IC IB
PNP SILICON TRANSISTOR
RATINGS UNIT -40 V -30 V -5 V Pulse -7 A Collector Current -3 A DC Base Current -0.6 A Tc=25℃ 10 W Collector Dissipation PD Ta=25℃ 350 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW
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