BAV99

UNISONIC TECHNOLOGIES CO., LTD BAV99 HIGH CONDUCTANCE ULTRA FAST DIODE EQUIVALENT 3 3 1 DIODE 2 1 2 SOT-23 SOT-323 4 23 3 3 A K 6 2 1 5 K A 2 1 1 SOT-523 SOT-363 For 3 Pin Package 6 5 4 *Pb-free plating product number: BAV99L 1 2 3 For 6 Pin Package ORDERING INFORMATION Order Number Normal Lead Free Plating BAV99-AE3-R BAV99L-AE3-R BAV99-AL3-R BAV99L-AL3-R BAV99-AN3-R BAV99L-AN3-R BAV99-AL6-R BAV99L-AL6-R Package SOT-23 SOT-323 SOT-523 SOT-363 1 K1 K1 K1 A1 2 A2 A2 A2 K1 Pin Assignment 3 4 5 K2A1 K2A1 K2A1 A2K2 A2 K2 6 A1K1 Packing Tape Reel Tape Reel Tape Reel Tape Reel Note: Pin Assignment: A: Anode K: Cathode BAV99L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-523, AN3: SOT-523, AL 6: SOT-363 (3) L: Lead Free Plating Blank: Pb/Sn , MARKING V99 Lead Plating V99 Lead Plating For 3 Pin For 6 Pin www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R601-005,B BAV99 ABSOLUTE MAXIMUM RATINGS* (Ta = 25℃, unless otherwise specified.) PARAMETER Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Pulse width = 1.0 second Forward Surge Current Pulse width = 1.0 microsecond SOT-23 Total Device Dissipation SOT-363 SYMBOL WIV IF(AV) IFM IFRM IFSM PD RATINGS 70 200 600 700 1.0 2.0 350 200 DIODE UNIT V mA mA mA A mW mW Junction Temperature TJ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note: 1. These ratings are based on a maximum junction temperature of 150°C 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction to Ambient SYMBOL SOT-23 SOT-363 θJA RATINGS 357 625 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Ta = 25℃, unless otherwise specified.) PARAMETER Breakdown Voltage Maximum Instantaneous Forward Voltage Peak Forward Voltage Maximum Instantaneous Reverse Current Diode Capacitance Reverse Recovery Time SYMBOL TEST CONDITIONS VR IR = 100µA IF = 1.0mA IF = 10mA VFM IF = 50mA IF = 150mA VSM IF = 10mA, tR = 20nS VR = 70V IRM VR = 25V, Ta = 150°C VR = 70V, Ta = 150°C CO VR = 0, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA tRR RL = 100Ω MIN 70 TYP MAX 715 855 1.0 1.25 1.75 2.5 30 50 1.5 6.0 UNIT V mV mV V V V µA pF ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R601-005,B BAV99 TYPICAL CHARACTERISTICS Reverse Voltage vs. Reverse Current BV - 1.0 ~ 100 uA 150 Reverse Voltage, VR (V) DIODE Reverse Current vs. Reverse Voltage IR - 10 ~ 100 V 300 Ta = 25℃ Reverse Current, IR (nA) Ta = 25℃ 150 250 200 150 100 50 0 10 2 3 20 30 50 70 100 150 150 150 1 2 3 5 10 20 30 50 100 Reverse Voltage, V R (V) GENERAL RULE : The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Reverse Current, IR (uA) Forward Voltage vs. Forward Current VF - 1.0 ~ 100 uA 485 450 Forward Voltage, VF (mV) Forward Voltage vs. Forward Current VF – 0.1 ~ 10 mA 725 700 Forward Voltge, VF (mV) Ta = 25℃ Ta = 25℃ 400 350 300 250 225 1 2 3 5 10 20 30 50 100 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF (uA) Forward Voltage vs. Forward Current VF - 1.0 ~ 800 mA 1.5 1.4 Ta = 25℃ 1.3 Forward Current, IF (mA) Capacitance vs. Reverse Voltage VR - 0.0 ~ 15 V Ta = 25℃ Forward Voltage, VF (V) 1.2 1 Capacitance (pF) 1.2 1.1 0.8 0.6 10 1 0 20 30 50 100 200 300 500 2 4 6 8 10 12 14 15 Forward Current, IF (mA) Reverse Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R601-005,B BAV99 TYPICAL CHARACTERISTICS(Cont.) Reverse Recovery Time vs. Reverse Current TRR - IR 10 mA vs. 60 mA 4 Reverse Recovery (nS) DIODE Average Rectified Current (Io) & Forward Current (IF) versus Ambient Temperature (Ta) 500 Power Dissipation, PD (mW) Ta = 25℃ 3.5 3 2.5 2 1.5 1 10 400 300 200 100 0 0 IR -F o rw ar d Cu rre nt S te a dy Sta t e- Io - A vera ge R e ctif ie dC mA urr en t - mA 20 30 40 50 60 Reverse Current (mA) IRR (Reverse Recovery Current ) = 1.0 mA - Rloop = 100 Ω 50 100 150 Ambient Temperture, Ta ( ℃) Power Derating Curve 500 Power Dissipation, PD (mW) 400 300 SOT-23 200 100 0 0 SOT-363 50 100 150 200 Average Temperature, Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R601-005,B