BC337

UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-emitter voltage : BC337 : BC338 Collector-emitter voltage : BC337 : BC338 Emitter-base voltage Collector current (DC) Collector dissipation Junction Temperature Storage Temperature SYMBOL VCES RATING 50 30 UNIT V V V V V mA mW °C °C VCEO 45 25 5 800 625 150 -55 ~ +150 VEBO Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-emitter breakdown voltage : BC337 : BC338 Collector-emitter breakdown voltage : BC337 : BC338 Emitter-base breakdown voltage Collector Cut-off Current : BC337 : BC338 DC current gain Collector-emitter saturation voltage SYMBOL BVCEO TEST CONDITIONS Ic=10mA, IB=0 MIN 45 25 TYP MAX UNIT V V V V V BVCES Ic=0.1mA, VBE=0 50 30 5 2 2 100 60 100 100 630 0.7 BVEBO ICES IE=0.1mA, Ic=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, Ic=100mA VCE=1V, Ic=300mA Ic=500mA, IB=50mA nA nA hFE1 hFE2 VCE(sat) V UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-039,B UTC BC337/338 PARAMETER Base-emitter on voltage Current gain bandwidth product Output Capacitance NPN EPITAXIAL SILICON TRANSISTOR SYMBOL VBE(on) fT Cob TEST CONDITIONS VCE=1V, Ic=300mA VCE=5V, Ic=10mA, f=50MHz VCB=10V, IE=0, f=1MHz MIN TYP 100 12 MAX 1.2 UNIT V MHz pF CLASSIFICATION OF hFE1 RANK hFE1 16 100-250 25 160-400 40 250-630 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-039,B