BC337_09

UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 NPN SILICON TRANSISTOR Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G ORDERING INFORMATION Normal BC337-x-T92-B BC337-x-T92-K BC338-x-T92-B BC338-x-T92-K Ordering Number Lead Free Plating BC337L-x-T92-B BC337L-x-T92-K BC338L-x-T92-B BC338L-x-T92-K Halogen Free BC337G-x-T92-B BC337G-x-T92-K BC338G-x-T92-B BC338G-x-T92-K Package TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., LTD 1 of 3 QW-R201-039.C BC337/BC338 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation Derate above 25°C BC337 BC338 BC337 BC338 SYMBOL VCES VCEO VEBO IC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) RATINGS 50 30 45 25 UNIT V V V V 5 V 800 mA 625 mW PC 5 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJc RATINGS 200 83.3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER BC337 Collector-Emitter Breakdown Voltage BC338 BC337 Collector-Emitter Breakdown Voltage BC338 Emitter-Base Breakdown Voltage BC337 Collector Cut-off Current BC338 DC Current Gain Collector-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain bandwidth product SYMBOL BVCEO BVCES BVEBO ICES hFE1 hFE2 VCE(SAT) VBE(ON) Cob fT TEST CONDITIONS IC=10mA, IB=0 IC=0.1mA, VBE=0 IE=0.1mA, IC=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA, f=50MHz MIN 45 25 50 30 5 TYP MAX UNIT V V V V V 100 nA 100 nA 630 0.7 1.2 12 100 V V pF MHz 2 2 100 60 CLASSIFICATION OF hFE1 RANK hFE1 16 100-250 25 160-400 40 250-630 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R201-039.C BC337/BC338 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-039.C