BC817-X-AL3-R

UNISONIC TECHNOLOGIES CO., LTD BC817 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. NPN SILICON TRANSISTOR Lead-free: BC817L Halogen-free:BC817G ORDERING INFORMATION Normal BC817-x-AE3-R BC817-x-AL3-R Ordering Number Lead Free BC817L-x-AE3-R BC817L-x-AL3-R Halogen Free BC817G-x-AE3-R BC817G-x-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel BC817L-x-AE3-R (1) R: Tape Reel (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (2) AE3: SOT-23, AL3: SOT-323 (3) x: refer to Classification of hFE (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn MARKING BC817-16 BC817-25 BC817-40 6A L: Lead Free G: Halogen Free 6B L: Lead Free G: Halogen Free 6C L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-025.E BC817 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous SYMBOL VCES VCEO VEBO IC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) RATINGS UNIT 50 V 45 V 5.0 V 1.5 A SOT-23 310 mW Collector Dissipation PC SOT-323 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-OFF Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage hFE1 hFE2 VCE(SAT) VBE(ON) IC=100mA,VCE=1.0V IC =500mA, VCE=1.0V IC =500mA,IB=50mA IC =500mA, VCE=1.0V See Classification 40 0.7 1.2 SYMBOL BVCEO BVCES BVEBO ICBO TEST CONDITIONS IC=10mA, IB=0 IC=100μA,IE=0 IE=10μA, Ic=0 VCB=20V VCB=20V,Ta=150°C MIN TYP MAX UNIT 45 50 5 100 5 V V V nA μA V V CLASSIFICATION OF hFE1 RANK RANGE 16 100-250 25 160-400 40 250-600 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-025.E BC817 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Base-Emitter On Voltage, VBE(ON) (V) Base-Emitter Voltage, VBE(SAT) (V) 3 of 4 QW-R206-025.E BC817 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR Gain Bandwidth Pro Duct, hFE(MHz) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power Dissipation, PD(mW) 4 of 4 QW-R206-025.E