BC848-X-AL3-R

BC848-X-AL3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    BC848-X-AL3-R - SWITCHING AND AMPLIFIER APPLICATIONS - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
BC848-X-AL3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 SWITCHING AND AMPLIFIER APPLICATION FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 NPN SILICON TRANSISTOR Lead-free: BC846L/BC847L/BC848L/BC849L/BC850L Halogen-free: BC846G/BC847G/BC848G/BC849G/BC850G ORDERING INFORMATION Normal BC846-x-AE3-R BC847-x-AE3-R BC848-x-AE3-R BC849-x-AE3-R BC850-x-AE3-R BC846-x-AL3-R BC847-x-AL3-R BC848-x-AL3-R BC849-x-AL3-R BC850-x-AL3-R BC846-x-AN3-R BC847-x-AN3-R BC848-x-AN3-R BC849-x-AN3-R BC850-x-AN3-R Ordering Number Lead Free BC846L-x-AE3-R BC847L-x-AE3-R BC848L-x-AE3-R BC849L-x-AE3-R BC850L-x-AE3-R BC846L-x-AL3-R BC847L-x-AL3-R BC848L-x-AL3-R BC849L-x-AL3-R BC850L-x-AL3-R BC846L-x-AN3-R BC847L-x-AN3-R BC848L-x-AN3-R BC849L-x-AN3-R BC850L-x-AN3-R Halogen Free BC846G-x-AE3-R BC847G-x-AE3-R BC848G-x-AE3-R BC849G-x-AE3-R BC850G-x-AE3-R BC846G-x-AL3-R BC847G-x-AL3-R BC848G-x-AL3-R BC849G-x-AL3-R BC850G-x-AL3-R BC846G-x-AN3-R BC847G-x-AN3-R BC848G-x-AN3-R BC849G-x-AN3-R BC850G-x-AN3-R Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-523 SOT-523 SOT-523 SOT-523 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-027,F BC846-BC850 MARKING BC846 BC847 BC848 NPN SILICON TRANSISTOR BC849 BC850 X: □: Rank Code, refer to Classification of hFE L: Lead Free, G: Halogen Free UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R206-027,F BC846-BC850 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT BC846 80 V Collector-Base Voltage VCBO BC847 / BC850 50 V BC848 / BC849 30 V BC846 65 V Collector-Emitter Voltage VCEO BC847 / BC850 45 V BC848 / BC849 30 V BC846 / BC847 6 V Emitter-Base Voltage VEBO BC848 / BC849 / BC850 5 V Collector Current (DC) Ic 100 mA SOT-23 310 mW Collector Dissipation PD SOT-323 200 mW SOT-523 150 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance BC846/BC847/BC848 BC849/BC850 Noise Figure BC849 BC850 SYMBOL TEST CONDITIONS ICBO VCB=30V, IE=0 hFE VCE=5.0V, Ic=2.0mA Ic=10mA,IB=0.5mA VCE(SAT) Ic=100mA,IB=5.0mA Ic=10mA,IB=0.5mA VBE(SAT) Ic=100mA,IB=5.0mA VCE=5.0V,Ic=2.0mA VBE(ON) VCE=5.0V,Ic=10mA VCE=5.0V,Ic=10mA fT f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz VCE=5V, Ic=200μA, f=1KHz, RG=2KΩ NF VCE=5V, IC=200μA, RG=2KΩ, f=30~15000Hz MIN 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 6 10 4 4 3 TYP MAX UNIT 15 nA 800 250 mV 600 mV mV mV 700 mV 720 mV MHz pF pF dB dB dB dB 580 CLASSIFICATION OF hFE RANK RANGE A 110-220 B 200-450 C 420-800 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-027,F BC846-BC850 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current , IC(mA) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 IC=10IB 1000 VBE(SAT) DC Current Gain, hFE Base-Emitter on Voltage 100 VCE=2V 10 100 VCE(sat) 1 10 1 10 100 1000 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Collector Current, IC(mA) Base-Emitter Voltage, VBE(V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Current Gain-Bandwidth Product, fT(MHz) Capacitance, Cob(pF) 4 of 5 QW-R206-027,F BC846-BC850 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-027,F
BC848-X-AL3-R
1. 物料型号: - BC846-BC850系列的NPN硅晶体管,有多种封装和环保等级的型号。包括SOT-23、SOT-323和SOT-523封装。 - 型号后缀: - "-x-AE3-R"对应SOT-23封装。 - "-x-AL3-R"对应SOT-323封装。 - "-x-AN3-R"对应SOT-523封装。 - "L"表示无铅。 - "G"表示无卤。

2. 器件简介: - BC846-BC850是NPN硅晶体管,适用于开关和放大应用。

3. 引脚分配: - SOT-23封装:E(发射极)、B(基极)、C(集电极)。 - SOT-323封装:E(发射极)、B(基极)、C(集电极)。 - SOT-523封装:E(发射极)、B(基极)、C(集电极)。

4. 参数特性: - 最大集-基电压:BC846为80V,BC847/BC850为50V,BC848/BC849为30V。 - 最大集-射电压:BC846为65V,BC847/BC850为45V,BC848/BC849为30V。 - 最大发射极-基电压:BC846/BC847为6V,BC848/BC849/BC850为5V。 - 集电极电流(DC):IC为100mA。 - 集电极功耗:SOT-23为310mW,SOT-323为200mW,SOT-523为150mW。 - 存储温度范围:-40~+150°C。

5. 功能详解: - 电气特性包括集电极截止电流、直流电流增益、集电极-发射极饱和电压、集电极-基极饱和电压、基-发射开通电压、电流增益带宽积、输出电容和输入电容等。

6. 应用信息: - 适用于自动插入厚膜和薄膜电路,作为BC856至BC860的补充。

7. 封装信息: - 提供SOT-23、SOT-323和SOT-523三种封装,每种封装都有铅、无铅和无卤三种环保等级。
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