BCP68

UTC BCP68 NPN EPITAXIAL SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V) * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification under high current conditions. 1 SOT-223 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage (Open Emitter) Collector-Emitter Voltage(Open Base) Emitter-Base Voltage(Open Collector) Collector Current (DC) Peak Collector Current Peak Base Current Total Power Dissipation, Ta ≤ 25℃ Operating Ambient Temperature Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Ta Tj Tstg RATINGS 32 20 5 1 2 200 1.37 -65 ~ +150 150 -65 ~ +150 UNIT V V V A A mA W ℃ ℃ ℃ THERMAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Thermal Resistance From Junction To Ambient Rth j-a Note 1 91 K/W Thermal Resistance From Junction To Soldering Point Rth j-s 10 K/W Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R207-008,B UTC BCP68 PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain NPN EPITAXIAL SILICON TRANSISTOR SYMBOL ICBO IEBO hFE ELECTRICAL CHARACTERISTICS (Tj = 25℃, unless otherwise specified.) TEST CONDITIONS IE = 0, VCB = 25V IE = 0, VCB = 25V, Tj = 150℃ IC = 0, VEB =5V IC = 5mA, VCE = 10V IC = 500mA, VCE = 1V IC = 1A, VCE = 1V IC = 500mA, VCE = 1V IC = 1A, IB = 100mA IC = 5mA, VCE = 10V IC = 1A, VCE = 1V IE = ie = 0, VCB = 5V, f = 1MHz IC = 10mA, VCE = 5V, f = 100MHz |IC| = 0.5A, |VCE| = 1V 40 1.6 38 50 85 60 160 620 1 375 375 500 MIN TYP MAX 100 10 100 UNIT nA µA nA DC Current Gain (BCP68-25) Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector Capacitance Transition Frequency DC current gain ratio of the complementary pairs VCEsat VBE CC fT hFE1 hFE2 mV mV V pF MHz DC current gain (typical values) 300 VCE = 1V 250 200 hFE 150 100 50 0 -1 -10 1 10 IC (mA) 102 103 104 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R207-008,B